M28LV64-250XN6

更新时间： 2024-09-16 22:51:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
18页	128K
描述
64K 8K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION

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中文翻译

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数据手册

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M28LV64-250XN6 数据手册

M28LV64

64K (8K x 8) LOW VOLTAGE PARALLEL EEPROM

with SOFTWARE DATA PROTECTION

NOT FOR NEW DESIGN

FAST ACCESS TIME: 200ns

SINGLE LOW VOLTAGE OPERATION

LOW POWER CONSUMPTION

FAST WRITE CYCLE:

– 64 Bytes Page Write Operation

– Byte or Page Write Cycle: 3ms Max

ENHANCED END OF WRITE DETECTION:

– Ready/BusyOpen Drain Output

(only on the M28LV64)

PDIP28 (P)

PLCC32 (K)

– Data Polling

– Toggle Bit

PAGE LOAD TIMER STATUS BIT

HIGH RELIABILITYSINGLE POLYSILICON,

CMOS TECHNOLOGY:

– Endurance>100,000 Erase/Write Cycles

– Data Retention >40 Years

SO28 (MS)

300 mils

TSOP28 (N)

8 x13.4mm

JEDEC APPROVED BYTEWIDE PIN OUT

SOFTWARE DATA PROTECTION

The M28LV64 is replaced by the

M28C64-xxW

Figure 1. Logic Diagram

DESCRIPTION

The M28LV64 is an 8K x 8 low power Parallel

EEPROM fabricated with SGS-THOMSON pro-

prietary single polysilicon CMOS technology. The

device offers fast access time with low power dis-

sipation and requires a 2.7V to 3.6V power supply.

A0-A12

DQ0-DQ7

Table 1. Signal Names

M28LV64

A0 - A12

Address Input

DQ0 - DQ7 Data Input / Output

RB *

Write Enable

Chip Enable

Output Enable

Ready / Busy

Supply Voltage

Ground

V_CC

V_SS

AI01538B

Note: * RB function is only available on the M28LV64.

May 1997

1/18

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...18

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M28LV64-300N6	STMICROELECTRONICS	获取价格	64K 8K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION
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M28LV64-300P6	STMICROELECTRONICS	获取价格	64K 8K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION