品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 闪存 | |
页数 | 文件大小 | 规格书 |
20页 | 717K | |
描述 | ||
256K(32K x8, Chip Erase)FLASH MEMORY |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, PLASTIC, DIP-32 | 针数: | 32 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.79 |
最长访问时间: | 100 ns | 其他特性: | BULK ERASE |
JESD-30 代码: | R-PDIP-T32 | 长度: | 41.91 mm |
内存密度: | 262144 bit | 内存集成电路类型: | FLASH |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 32768 words |
字数代码: | 32000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 32KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
编程电压: | 12 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最大供电电压 (Vsup): | 5.25 V |
最小供电电压 (Vsup): | 4.75 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 15.24 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
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