生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | PLASTIC, DIP-32 | 针数: | 32 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.79 |
最长访问时间: | 100 ns | 其他特性: | 1000 ERASE/PROGRAM CYCLES |
JESD-30 代码: | R-PDIP-T32 | 内存密度: | 262144 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 32768 words | 字数代码: | 32000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 32KX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
编程电压: | 12 V | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 5.25 V | 最小供电电压 (Vsup): | 4.75 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 类型: | NOR TYPE |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M28F256-10XB1TR | STMICROELECTRONICS |
获取价格 |
256K(32K x8, Chip Erase)FLASH MEMORY | |
M28F256-10XB312 | STMICROELECTRONICS |
获取价格 |
32KX8 FLASH 12V PROM, 100ns, PDIP32, PLASTIC, DIP-32 | |
M28F256-10XB3TR | STMICROELECTRONICS |
获取价格 |
256K(32K x8, Chip Erase)FLASH MEMORY | |
M28F256-10XB6TR | STMICROELECTRONICS |
获取价格 |
256K(32K x8, Chip Erase)FLASH MEMORY | |
M28F256-10XC113 | STMICROELECTRONICS |
获取价格 |
32KX8 FLASH 12V PROM, 100ns, PQCC32, 0.450 X 0.550 INCH, PLASTIC, LCC-32 | |
M28F256-10XC1TR | STMICROELECTRONICS |
获取价格 |
256K(32K x8, Chip Erase)FLASH MEMORY | |
M28F256-10XC3TR | STMICROELECTRONICS |
获取价格 |
256K(32K x8, Chip Erase)FLASH MEMORY | |
M28F256-10XC6TR | STMICROELECTRONICS |
获取价格 |
256K(32K x8, Chip Erase)FLASH MEMORY | |
M28F256-10XF112 | STMICROELECTRONICS |
获取价格 |
32KX8 FLASH 12V PROM, 100ns, CDIP32, FRIT SEALED, CERAMIC, DIP-32 | |
M28F256-10XF114 | STMICROELECTRONICS |
获取价格 |
32KX8 FLASH 12V PROM, 100ns, CDIP32, FRIT SEALED, CERAMIC, DIP-32 |