M28F101-150XN1RTR

更新时间： 2024-11-10 13:09:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		闪存存储内存集成电路光电二极管
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M28F101

1 Mb (128K x 8, Chip Erase) FLASH MEMORY

5V ±10% SUPPLY VOLTAGE

12V PROGRAMMING VOLTAGE

FAST ACCESS TIME: 70ns

BYTE PROGRAMING TIME: 10µs typical

ELECTRICALCHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

– Stand-by Current: 100µAmax

10,000 ERASE/PROGRAM CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

PLCC32 (K)

PDIP32 (P)

OTP COMPATIBLE PACKAGES and PINOUTS

ELECTRONIC SIGNATURE

– ManufacturerCode: 20h

– Device Code: 07h

TSOP32 (N)

8 x 20 mm

DESCRIPTION

The M28F101 FLASH Memory is a non-volatile

memory which may be erased electrically at the

chip level and programmed byte-by-byte. It is or-

ganisedas128Kbytes of8 bits.It usesa command

and thus provides a simple microprocessor inter-

face. The M28F101 FLASH Memory is suitable for

applications where the memory has to be repro-

grammed in the equipment. The access time of

70ns makes the device suitable for use in high

speed microprocessor systems.

Figure 1. Logic Diagram

A0-A16

DQ0-DQ7

Table 1. Signal Names

M28F101

A0-A16

Address Inputs

Data Inputs / Outputs

Chip Enable

DQ0-DQ7

Output Enable

Write Enable

AI00666B

V_PP

V_CC

V_SS

Program Supply

Supply Voltage

Ground

April 1997

1/23

12 3 4 5 6 7...23

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