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M28010-10BA6 PDF预览

M28010-10BA6

更新时间: 2024-11-06 04:48:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
23页 150K
描述
128KX8 EEPROM 5V, 100ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32

M28010-10BA6 数据手册

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M28010  
1 Mbit (128K x 8) Parallel EEPROM  
With Software Data Protection  
PRELIMINARY DATA  
Fast Access Time: 100 ns  
Single Supply Voltage:  
– 4.5 V to 5.5 V for M28010  
– 2.7 V to 3.6 V for M28010-W  
– 1.8 V to 2.4 V for M28010-R  
Low Power Consumption  
32  
Fast BYTE and PAGE WRITE (up to 128 Bytes)  
Enhanced Write Detection and Monitoring:  
– Data Polling  
1
PDIP32 (BA)  
– Toggle Bit  
– Page Load Timer Status  
JEDEC Approved Bytewide Pin-Out  
Software Data Protection  
Hardware Data Protection  
TSOP32 (NA)  
8 x 20 mm  
Software Chip Erase  
PLCC32 (KA)  
100000 Erase/Write Cycles (minimum)  
Data Retention (minimum): 10 Years  
DESCRIPTION  
The M28010 devices consist of 128Kx8 bits of low  
power, parallel EEPROM, fabricated with  
STMicroelectronics’ proprietary double polysilicon  
CMOS technology. The devices offer fast access  
time, with low power dissipation, and require a  
single voltage supply (5V, 3V or 2V, depending on  
the option chosen).  
Figure 1. Logic Diagram  
V
CC  
17  
8
A0-A16  
DQ0-DQ7  
Table 1. Signal Names  
A0-A16  
Address Input  
Data Input / Output  
Write Enable  
W
M28010  
DQ0-DQ7  
E
W
E
G
Chip Enable  
G
Output Enable  
Supply Voltage  
V
SS  
V
CC  
AI02221  
V
Ground  
SS  
February 2000  
1/23  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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