Datasheet > M27W202-120B6TR

M27W202-120B6TR

更新时间： 2024-10-29 22:35:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	105K
描述
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27W202-120B6TR 数据手册

M27W202

2 Mbit (128Kb x16) Low Voltage UV EPROM and OTP EPROM

■ 2.7V to 3.6V SUPPLY VOLTAGE in READ

OPERATION

■ ACCESS TIME:

– 80ns at V = 3.0V to 3.6V

– 100ns at V = 2.7V to 3.6V

■ LOW POWER CONSUMPTION:

– Active Current 20mA at 5MHz

– Standby Current 15µA

FDIP40W (F)

PDIP40 (B)

■ PIN COMPATIBLE with M27C202

■ PROGRAMMING TIME: 100µs/word

■ HIGH RELIABILITY CMOS TECHNOLOGY

– 2,000V ESD Protection

– 200mA Latchup Protection Immunity

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

PLCC44 (K)

TSOP40 (N)

10 x 14 mm

– Device Code: 001Ch

Figure 1. Logic Diagram

DESCRIPTION

The M27W202 is a low voltage 2 Mbit EPROM of-

fered in the two range UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organised as 131,072 by

16 bits.

The M27W202 operates in the read mode with a

supply voltage as low as 2.7V at –40 to 85°C tem-

perature range. The decrease in operating power

allows either a reduction of the size of the battery

or an increase in the time between battery re-

charges.

A0-A16

Q0-Q15

M27W202

The FDIP40W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For application where the content is programmed

only one time and erasure is not required, the

M27W201 is offered in PDIP40, PLCC44 and

TSOP40 (10 x 14 mm) packages.

AI02730

April 2000

1/15

12 3 4 5 6 7...15

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