5秒后页面跳转
M27W101-100B6TR PDF预览

M27W101-100B6TR

更新时间: 2024-10-28 22:11:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 105K
描述
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM

M27W101-100B6TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIP包装说明:0.600 INCH, LEAD FREE, PLASTIC, DIP-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.83最长访问时间:100 ns
JESD-30 代码:R-PDIP-T32JESD-609代码:e3
长度:41.91 mm内存密度:1048576 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:5.08 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15.24 mm

M27W101-100B6TR 数据手册

 浏览型号M27W101-100B6TR的Datasheet PDF文件第2页浏览型号M27W101-100B6TR的Datasheet PDF文件第3页浏览型号M27W101-100B6TR的Datasheet PDF文件第4页浏览型号M27W101-100B6TR的Datasheet PDF文件第5页浏览型号M27W101-100B6TR的Datasheet PDF文件第6页浏览型号M27W101-100B6TR的Datasheet PDF文件第7页 
M27W101  
1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM  
2.7V to 3.6V LOW VOLTAGE in READ  
OPERATION  
ACCESS TIME:  
32  
32  
– 70ns at V = 3.0V to 3.6V  
CC  
– 80ns at V = 2.7V to 3.6V  
CC  
1
1
PIN COMPATIBLE with M27C1001  
LOW POWER CONSUMPTION:  
– Active Current 15mA at 5MHz  
– Standby Current 15µA  
FDIP32W (F)  
PDIP32 (B)  
PROGRAMMING TIME 100µs/byte  
HIGH RELIABILITY CMOS TECHNOLOGY  
– 2,000V ESD Protection  
– 200mA Latchup Protection Immunity  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
– Device Code: 05h  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27W101 is a low voltage 1 Mbit EPROM of-  
fered in two range UV (ultra violet erase) and OTP  
(one timeprogrammable). It is ideally suited for mi-  
croprocessor systems requiring large data or pro-  
gram storage and is organized as 131,072 by 8  
bits.  
V
V
CC  
PP  
17  
8
The M27W101 operates in the read mode with a  
supply voltage as low as 2.7V at –40 to 85 °C tem-  
perature range.  
A0-A16  
Q0-Q7  
The decrease in operating power allows either a  
reduction of the size of the battery or an increase  
in the time between battery recharges.  
P
M27W101  
E
The FDIP32W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
G
For application where the content is programmed  
only one time and erasure is not required, the  
M27W101 is offered in PDIP32, PLCC32 and  
TSOP32 (8 x 20 mm) packages.  
V
SS  
AI01587  
April 2000  
1/15  

与M27W101-100B6TR相关器件

型号 品牌 获取价格 描述 数据表
M27W101-100F6 STMICROELECTRONICS

获取价格

128KX8 UVPROM, 100ns, CDIP32, CERAMIC, WINDOWED, FRIT SEALED, DIP-32
M27W101-100F6TR STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101-100K6TR STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101-100N6 STMICROELECTRONICS

获取价格

128KX8 OTPROM, 100ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32
M27W101-100N6TR STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101-120B6TR STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101-120F6TR STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101-120K6 STMICROELECTRONICS

获取价格

暂无描述
M27W101-120K6TR STMICROELECTRONICS

获取价格

1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101-120N6 STMICROELECTRONICS

获取价格

128KX8 OTPROM, 100ns, PDSO32, 8 X 20 MM, PLASTIC, TSOP-32