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M27V160-200XF1TR PDF预览

M27V160-200XF1TR

更新时间: 2024-10-26 22:35:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 105K
描述
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM

M27V160-200XF1TR 数据手册

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M27V160  
16 Mbit (2Mb x8 or 1Mb x16)  
Low Voltage UV EPROM and OTP EPROM  
3V to 3.6V LOW VOLTAGE in READ  
OPERATION  
ACCESS TIME: 100ns  
BYTE-WIDE or WORD-WIDE  
44  
42  
CONFIGURABLE  
16 Mbit MASK ROM REPLACEMENT  
LOW POWER CONSUMPTION  
– Active Current 30mA at 8MHz  
– Standby Current 60µA  
1
1
FDIP42W (F)  
SO44 (M)  
PROGRAMMING VOLTAGE: 12.5V ± 0.25V  
PROGRAMMING TIME: 50µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
42  
– Device Code: B1h  
1
PDIP42 (B)  
DESCRIPTION  
The M27V160 is a low voltage 16 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage. It is organised as either 2 Mbit  
words of 8 bit or 1 Mbit words of 16 bit. The pin-out  
is compatible with a 16 Mbit Mask ROM.  
The M27V160 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
Figure 1. Logic Diagram  
V
CC  
20  
Q15A–1  
A0-A19  
15  
The FDIP42W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written rapidly to  
the device by following the programming proce-  
dure.  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27V160 is offered in PDIP42 and SO44 packag-  
es.  
Q0-Q14  
E
M27V160  
G
BYTEV  
PP  
V
SS  
AI01898  
March 2000  
1/15  

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