Datasheet > M27V201-100N1TR

M27V201-100N1TR

更新时间： 2024-10-26 22:55:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	105K
描述
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM

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数据手册

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M27V201-100N1TR 数据手册

M27V201

2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM

■ LOW VOLTAGE READ OPERATION:

3V to 3.6V

■ FAST ACCESS TIME: 120ns

■ LOW POWER CONSUMPTION:

– Active Current 15mA at 5MHz

– Standby Current 20µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/byte (typical)

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

FDIP32W (F)

PDIP32 (B)

– Device Code: 61h

DESCRIPTION

The M27V201 is a low voltage 2 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage and is organised as 262,144 by 8

bits.

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

Figure 1. Logic Diagram

The M27V201 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP32W (window ceramic frit-seal package)

has a transparent lid which allow the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern.

A0-A17

Q0-Q7

Table 1. Signal Names

A0-A17

Address Inputs

Data Outputs

Chip Enable

Output Enable

Program

M27V201

Q0-Q7

Program Supply

Supply Voltage

Ground

AI00693B

May 1998

1/15

12 3 4 5 6 7...15

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