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M27V101-120B1TR PDF预览

M27V101-120B1TR

更新时间: 2024-10-26 22:11:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
15页 106K
描述
1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM

M27V101-120B1TR 数据手册

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M27V101  
1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM  
LOW VOLTAGE READ OPERATION:  
3V to 3.6V  
FAST ACCESS TIME: 90ns  
LOW POWER CONSUMPTION:  
32  
32  
– Active Current 15mA at 5MHz  
– Standby Current 20µA  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/byte (typical)  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
FDIP32W (F)  
PDIP32 (B)  
– Device Code: 05h  
DESCRIPTION  
The M27V101 is a low voltage 1 Mbit EPROM of-  
fered in the two ranges UV (ultra violet erase) and  
OTP (one time programmable). It is ideally suited  
for microprocessor systems requiring large data or  
program storage and is organized as 131,072 by 8  
bits.  
PLCC32 (K)  
TSOP32 (N)  
8 x 20 mm  
Figure 1. Logic Diagram  
The M27V101 operates in the read mode with a  
supply voltage as low as 3V. The decrease in op-  
erating power allows either a reduction of the size  
of the battery or an increase in the time between  
battery recharges.  
V
V
PP  
CC  
The FDIP32W (window ceramic frit-seal package)  
has a transparent lid which allow the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern.  
17  
8
A0-A16  
Q0-Q7  
Table 1. Signal Names  
P
E
A0-A16  
Address Inputs  
Data Outputs  
Chip Enable  
Output Enable  
Program  
M27V101  
Q0-Q7  
E
G
P
G
V
SS  
V
Program Supply  
Supply Voltage  
Ground  
PP  
AI00660B  
V
CC  
V
SS  
May 1998  
1/15  

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