是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | FRIT SEALED, WINDOWED, CERAMIC, DIP-28 |
针数: | 28 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.61 |
风险等级: | 5.71 | Is Samacsys: | N |
最长访问时间: | 100 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-GDIP-T28 | JESD-609代码: | e3 |
长度: | 36.92 mm | 内存密度: | 262144 bit |
内存集成电路类型: | UVPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 28 |
字数: | 32768 words | 字数代码: | 32000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 32KX8 | |
输出特性: | 3-STATE | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | WDIP | 封装等效代码: | DIP28,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE, WINDOW |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 编程电压: | 12.75 V |
认证状态: | Not Qualified | 座面最大高度: | 5.97 mm |
最大待机电流: | 0.0001 A | 子类别: | EPROMs |
最大压摆率: | 0.03 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
HN27C256AG-10 | HITACHI |
功能相似 |
256K(32K x 8-bit) UV and OTP EPROM |
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