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M27C256B-10F6TR PDF预览

M27C256B-10F6TR

更新时间: 2024-11-28 22:17:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 149K
描述
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM

M27C256B-10F6TR 数据手册

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M27C256B  
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME: 45ns  
LOW POWER CONSUMPTION:  
– Active Current 30mA at 5MHz  
– Standby Current 100µA  
28  
28  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
FDIP28W (F)  
PDIP28 (B)  
– Device Code: 8Dh  
DESCRIPTION  
The M27C256B is a 256 Kbit EPROM offered in  
the two ranges UV (ultra violet erase) and OTP  
(one time programmable). It is ideally suited for mi-  
croprocessor systems and is organized as 32,768  
by 8 bits.  
PLCC32 (C)  
TSOP28 (N)  
8 x 13.4 mm  
Figure 1. Logic Diagram  
The FDIP28W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27C256B is offered in PDIP28, PLCC32 and  
TSOP28 (8 x 13.4 mm) packages.  
V
V
PP  
CC  
15  
8
A0-A14  
Q0-Q7  
E
M27C256B  
G
V
SS  
AI00755B  
August 2002  
1/16  

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