5秒后页面跳转
M27C256B-10C6TR PDF预览

M27C256B-10C6TR

更新时间: 2024-11-28 22:17:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
16页 149K
描述
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM

M27C256B-10C6TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.8Is Samacsys:N
最长访问时间:100 ns其他特性:12.75V PROGRAMMING VOLTAGE
I/O 类型:COMMONJESD-30 代码:R-PQCC-J32
JESD-609代码:e3长度:13.97 mm
内存密度:262144 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):245电源:5 V
编程电压:12.75 V认证状态:Not Qualified
座面最大高度:3.56 mm最大待机电流:0.0001 A
子类别:OTP ROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:11.43 mm
Base Number Matches:1

M27C256B-10C6TR 数据手册

 浏览型号M27C256B-10C6TR的Datasheet PDF文件第2页浏览型号M27C256B-10C6TR的Datasheet PDF文件第3页浏览型号M27C256B-10C6TR的Datasheet PDF文件第4页浏览型号M27C256B-10C6TR的Datasheet PDF文件第5页浏览型号M27C256B-10C6TR的Datasheet PDF文件第6页浏览型号M27C256B-10C6TR的Datasheet PDF文件第7页 
M27C256B  
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM  
5V ± 10% SUPPLY VOLTAGE in READ  
OPERATION  
ACCESS TIME: 45ns  
LOW POWER CONSUMPTION:  
– Active Current 30mA at 5MHz  
– Standby Current 100µA  
28  
28  
1
1
PROGRAMMING VOLTAGE: 12.75V ± 0.25V  
PROGRAMMING TIME: 100µs/word  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 20h  
FDIP28W (F)  
PDIP28 (B)  
– Device Code: 8Dh  
DESCRIPTION  
The M27C256B is a 256 Kbit EPROM offered in  
the two ranges UV (ultra violet erase) and OTP  
(one time programmable). It is ideally suited for mi-  
croprocessor systems and is organized as 32,768  
by 8 bits.  
PLCC32 (C)  
TSOP28 (N)  
8 x 13.4 mm  
Figure 1. Logic Diagram  
The FDIP28W (window ceramic frit-seal package)  
has a transparent lid which allows the user to ex-  
pose the chip to ultraviolet light to erase the bit pat-  
tern. A new pattern can then be written to the  
device by following the programming procedure.  
For applications where the content is programmed  
only one time and erasure is not required, the  
M27C256B is offered in PDIP28, PLCC32 and  
TSOP28 (8 x 13.4 mm) packages.  
V
V
PP  
CC  
15  
8
A0-A14  
Q0-Q7  
E
M27C256B  
G
V
SS  
AI00755B  
August 2002  
1/16  

M27C256B-10C6TR 替代型号

型号 品牌 替代类型 描述 数据表
M27C256B-10C6 STMICROELECTRONICS

类似代替

暂无描述

与M27C256B-10C6TR相关器件

型号 品牌 获取价格 描述 数据表
M27C256B-10C6X STMICROELECTRONICS

获取价格

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B-10C7 STMICROELECTRONICS

获取价格

IC,EPROM,32KX8,CMOS,LDCC,32PIN,PLASTIC
M27C256B-10C7TR STMICROELECTRONICS

获取价格

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B-10C7X STMICROELECTRONICS

获取价格

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B-10F1 STMICROELECTRONICS

获取价格

32KX8 UVPROM, 100ns, CDIP28, 0.280 INCH, LEAD FREE, CERAMIC, WINDOWED, FRIT SEALED, DIP-28
M27C256B-10F1TR STMICROELECTRONICS

获取价格

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B-10F1X STMICROELECTRONICS

获取价格

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B-10F3 STMICROELECTRONICS

获取价格

32KX8 UVPROM, 100ns, CDIP28, 0.280 INCH, LEAD FREE, CERAMIC, WINDOWED, FRIT SEALED, DIP-28
M27C256B-10F3TR STMICROELECTRONICS

获取价格

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B-10F3X STMICROELECTRONICS

获取价格

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM