Datasheet > M27C256B-10B1TR

M27C256B-10B1TR

更新时间： 2024-11-28 22:17:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
16页	149K
描述
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM

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数据手册

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M27C256B-10B1TR 数据手册

M27C256B

256 Kbit (32Kb x 8) UV EPROM and OTP EPROM

■ 5V ± 10% SUPPLY VOLTAGE in READ

OPERATION

■ ACCESS TIME: 45ns

■ LOW POWER CONSUMPTION:

– Active Current 30mA at 5MHz

– Standby Current 100µA

■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

■ PROGRAMMING TIME: 100µs/word

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

FDIP28W (F)

PDIP28 (B)

– Device Code: 8Dh

DESCRIPTION

The M27C256B is a 256 Kbit EPROM offered in

the two ranges UV (ultra violet erase) and OTP

(one time programmable). It is ideally suited for mi-

croprocessor systems and is organized as 32,768

by 8 bits.

PLCC32 (C)

TSOP28 (N)

8 x 13.4 mm

Figure 1. Logic Diagram

The FDIP28W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written to the

device by following the programming procedure.

For applications where the content is programmed

only one time and erasure is not required, the

M27C256B is offered in PDIP28, PLCC32 and

TSOP28 (8 x 13.4 mm) packages.

A0-A14

Q0-Q7

M27C256B

AI00755B

August 2002

1/16

12 3 4 5 6 7...16

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