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LX5506LQ-TR

更新时间： 2024-11-11 19:36:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 射频微波
页数 文件大小 规格书
9页 282K
描述
Wide Band Medium Power Amplifier, 4500MHz Min, 6000MHz Max, 1 Func, BIPolar, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MLPQ-16

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LX5506LQ-TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended包装说明：LCC16,.12SQ,20
Reach Compliance Code：compliant风险等级：5.63
特性阻抗：50 Ω构造：COMPONENT
增益：19 dB最大输入功率 (CW)：15 dBm
JESD-609代码：e3安装特点：SURFACE MOUNT
功能数量：1端子数量：16
最大工作频率：6000 MHz最小工作频率：4500 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：LCC16,.12SQ,20
电源：3.3 V射频/微波设备类型：WIDE BAND MEDIUM POWER
子类别：RF/Microwave Amplifiers表面贴装：YES
技术：BIPOLAR端子面层：Matte Tin (Sn)
Base Number Matches：1

LX5506LQ-TR 数据手册

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LX5506  
®
InGaP HBT 4.5 – 6GHz Power Amplifier  
TM  
PRODUCTION DATA SHEET  
KEY FEATURES  
DESCRIPTION  
ƒ Advanced InGaP HBT  
ƒ Single-Polarity 3.3V Supply  
ƒ EVM ~ 3% at Pout=18dBm for  
64QAM/ 54Mbps OFDM  
ƒ P1dB ~ +26dBm  
ƒ Power Gain ~ 23dB at  
5.25GHz for Icq ~100mA  
ƒ Power Gain ~ 21dB at  
5.85GHz for Icq ~100mA  
ƒ Total Current ~190mA at  
Pout=18dBm at 5.25GHz  
ƒ ACPR ~ -50dBc at 30MHz  
Offset at Pout=18dBm  
The LX5506 is a power amplifier  
For OFDM operation (64QAM,  
designed for the FCC Unlicensed 54Mbps), the PA provides +18dBm  
National Information Infrastructure linear output power with a very low  
(U-NII) band, HyperLAN2 and Japan EVM (Error-Vector Magnitude) of  
WLAN applications in the 4.9-5.95 3%, and consumes about 190mA total  
GHz frequency range. The PA is DC current. At higher supply voltage  
implemented  
as  
a
three-stage of 5V, the same device provides  
monolithic microwave integrated +24dBm linear OFDM output power  
circuit (MMIC) with active bias and with 5% EVM.  
complete on-chip input matching. The  
device is manufactured with an 3mmx3mm micro-lead package (MLP).  
InGaP/GaAs Heterojunction Bipolar The compact footprint, low profile, and  
The LX5506 is available in a 16-pin  
ƒ Complete On-Chip Input Match  
ƒ Simple Output Capacitor Match  
ƒ Small Footprint: 3x3mm2  
ƒ Low Profile: 0.9mm  
Transistor  
(HBT)  
IC  
process excellent thermal capability of the MLP  
(MOCVD). It operates at a single package makes the LX5506 an ideal  
positive voltage supply of 3.3V solution for broadband, high-gain  
(nominal), with +26dBm of P1dB and power amplifier requirements for IEEE  
up to 23dB power gain in the 5.15 - 802.11a, and HiperLAN2 portable  
5.85GHz frequency range with a WLAN applications.  
APPLICATIONS  
simple output matching capacitor pair.  
ƒ FCC U-NII Wireless  
ƒ IEEE 802.11a  
ƒ HiperLAN2  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
ƒ 5GHz Cordless Phone  
PRODUCT HIGHLIGHT  
PACKAGE ORDER INFO  
Plastic MLPQ  
16-Pin  
LQ  
LX5506LQ  
Pb-free Transition DC: 0436  
Note: Available in Tape & Reel. Append the letters “TR” to  
the part number. (i.e. LX5506LQ-TR)  
This device is classified as ESD Level 0 in accordance with  
JESD22-A114-B, (HBM) testing. Appropriate ESD  
procedures should be observed when handling this device.  
Copyright © 2003  
Rev. 1.2, 2004-08-05  
Microsemi  
Page 1  
Integrated Products Division  
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570  
1234567...9

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