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LSP1800AJR-S PDF预览

LSP1800AJR-S

更新时间: 2024-09-16 21:05:11
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
3页 277K
描述
Silicon Surge Protector,

LSP1800AJR-S 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:12 weeks风险等级:1.74
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

LSP1800AJR-S 数据手册

 浏览型号LSP1800AJR-S的Datasheet PDF文件第2页浏览型号LSP1800AJR-S的Datasheet PDF文件第3页 
Features  
Applications  
LED streetlights  
LCD backlighting  
Display lighting  
Fast switching  
Automatic reset  
SMA package  
Suitable for industrial lighting environments Intrinsically safe lighting  
RoHS compliant*  
LSPxxxxAJR Series LED Shunt Protector  
General Information  
®
Bourns LSP Series protectors are electronic shunts that provide a current bypass  
when an LED element in an LED series string fails open circuit. This ensures the  
remaining string of LEDs will continue to function. There are many cases where high  
reliability of the LED lighting must be maintained, such as LCD backlighting, transport  
lighting, avionics, intrinsically safe and low maintenance lighting.  
Anode  
LSPxx00  
Control  
Circuit  
The LSPxxxAJR Series is available in surface mount package DO-214AC (SMA) size  
format.  
Cathode  
Absolute Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Rating  
Symbol  
Value  
Unit  
LSP0600  
6
LSP0900  
LSP1300  
LSP1800  
9
Repetitive peak off-state voltage  
V
V
DRM  
13  
18  
Average on-state current (Note 1)  
Operating junction temperature  
Storage temperature  
I
T
T
1
A
T
J
s
-40 to +150  
-65 to +150  
260  
°C  
°C  
°C  
Lead temperature, soldering (10 s)  
Notes:  
1. Using 75 mm x 75 mm 4-Layer PCB (EIA/JESD51-7).  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Test Conditions  
= V  
Min.  
Nom.  
Max.  
10  
Unit  
µA  
I
Repetitive peak off-state current  
V
DRM  
D
DRM  
LSP0600  
LSP0900  
LSP1300  
LSP1800  
6
9
16  
18  
26  
33  
dv/dt = 750 V/ms,  
= 300  
V
Breakover voltage  
V
(BO)  
R
13  
18  
SOURCE  
I
I
V
Holding current  
Breakover current  
On-state voltage  
I
= 1 A, di/dt = 30 mA/ms  
T
5
30  
mA  
mA  
V
H
BO  
T
di/dt = 0.8 A/ms  
= 1 A  
75  
1.2  
I
T
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Test Conditions  
Min.  
Nom.  
Max.  
Unit  
EIA/JESD51-3 PCB, I = 350 mA,  
T
Junction to free air thermal resistance  
230  
°C/W  
T = 25 °C  
A
EIA/JESD51-7, 75 mm x 75 mm 4-Layer  
Junction to free air thermal resistance  
90  
°C/W  
PCB, I = 1.0 A, T = 25 °C  
T
A
JANUARY 2012 – REVISED FEBRUARY 2012  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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