Datasheet > LSJ210

LSJ210

更新时间： 2024-11-13 11:43:59

品牌	Logo	应用领域
MICROSS		/
页数	文件大小	规格书
1页	272K
描述
N-CHANNEL JFET

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LSJ210 数据手册

LSJ210

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix J210

FEATURES

The LSJ210 is a n-channel JFET General Purpose

DIRECT REPLACEMENT FOR SILICONIX J210

HIGH GAIN

HIGH INPUT IMPEDANCE

LOW INPUT CAPACITANCE

amplifier with low noise and low leakage.

g_fs= 7000µmho MIN

I_GSS= 100pA max

C_iss= 5pF

The SOT-23 package is well suited for cost sensitive

applications and mass production.

ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)

(See Packaging Information).

Maximum Temperatures

Storage Temperature

LSJ210 Benefits:

‐55°C to +150°C

‐55°C to +135°C

High gain

Low Leakage

Low Noise

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

Derating over temperature

MAXIMUM CURRENT

Gate Current (Note 1)

MAXIMUM VOLTAGES

Gate to Drain Voltage or Gate to Source Voltage

360mW

3.27 mW/°C

LSJ210 Applications:

General Purpose Amplifiers

UHV / VHF Amplifiers

Mixers

10mA

Oscillators

‐25V

LSJ210 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(off)

I_DSS

I_GSS

I_G

CHARACTERISTIC

Gate to Source Breakdown Voltage

Gate to Source Cutoff Voltage

MIN

‐25

‐1

‐‐

TYP.

‐‐

MAX

‐‐

‐3

‐100

‐‐

UNITS

CONDITIONS

V_DS= 0V, I_G= ‐1µA

V_DS= 15V, I_D= 1nA

V_DS= 15V, V_GS= 0V

V_DS= 0V, V_GS= ‐15V

V_DS= 10V, I_D= 1mA

I_G= 1mA, V_DS= 0V

Drain to Source Saturation Current (Note 2)

Gate Reverse Current (Note 3)

Gate Operating Current (Note 3)

Drain to Source On Resistance

‐10

‐‐

r_DS(on)

‐‐

LSJ210 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

CHARACTERISTIC

Forward Transconductance

Output Conductance

MIN

4000

‐‐

TYP.

‐‐

MAX

12000

150

UNITS

µmho

CONDITIONS

V_DS= 15V, V_GS= 0V , f = 1kHz

g_os

Click To Buy

C_iss

C_rss

e_n

Input Capacitance

Reverse Transfer Capacitance

Equivalent Noise Voltage

‐‐

V_DS= 15V, V_GS= 0V , f = 1MHz

nV/√Hz

V_DS= 15V, V_GS= 0V , f = 1kHz

LSJ210 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

t_d(on)

t_r

CHARACTERISTIC

UNITS

CONDITIONS

Turn On Time

V_DD= 10V

V_GS(H) = 0V

Turn On Rise Time

t_d(off)

t_f

Turn Off Time

See Switching Circuit

Turn Off Fall Time

Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ210 serviceability may be impaired.

Note 2 ‐ Pulse test duration = 2ms

Note 3 – Approximately doubles for every 10°C increase in T_A

Micross Components Europe

Available Packages:

SOT-23 (Top View)

LSJ210 in SOT-23

LSJ210 in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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与LSJ210相关器件

型号	品牌	获取价格	描述	数据表
LSJ210(SOT-23)	MICROSS	获取价格	Transistor
LSJ210_SOT-23	MICROSS	获取价格	N-CHANNEL JFET
LSJ210_TO-92	MICROSS	获取价格	N-CHANNEL JFET
LSJ210-2	Linear Systems	获取价格	LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER
LSJ211	MICROSS	获取价格	N-CHANNEL JFET
LSJ211_SOT-23	MICROSS	获取价格	N-CHANNEL JFET
LSJ211_TO-92	MICROSS	获取价格	N-CHANNEL JFET
LSJ212	MICROSS	获取价格	N-CHANNEL JFET
LSJ212_SOT-23	MICROSS	获取价格	N-CHANNEL JFET
LSJ212_TO-92	MICROSS	获取价格	N-CHANNEL JFET

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