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LSJ211

更新时间: 2024-11-13 11:43:59
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描述
N-CHANNEL JFET

LSJ211 数据手册

  
LSJ211  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix J211  
FEATURES  
The LSJ211 is a n-channel JFET General Purpose  
DIRECT REPLACEMENT FOR SILICONIX J211  
HIGH GAIN  
HIGH INPUT IMPEDANCE  
LOW INPUT CAPACITANCE  
amplifier with low noise and low leakage.  
gfs = 7000µmho MIN  
IGSS = 100pA max  
Ciss = 5pF  
The SOT-23 package is well suited for cost sensitive  
applications and mass production.  
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  
(See Packaging Information).  
Maximum Temperatures  
Storage Temperature  
LSJ211 Benefits:  
55°C to +150°C  
55°C to +135°C  
ƒ
ƒ
ƒ
High gain  
Low Leakage  
Low Noise  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
Derating over temperature  
MAXIMUM CURRENT  
Gate Current (Note 1)  
MAXIMUM VOLTAGES  
Gate to Drain Voltage or Gate to Source Voltage  
360mW  
3.27 mW/°C  
LSJ211 Applications:  
ƒ
ƒ
ƒ
ƒ
General Purpose Amplifiers  
UHV / VHF Amplifiers  
Mixers  
10mA  
Oscillators  
25V  
LSJ211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
IDSS  
IGSS  
IG  
CHARACTERISTIC  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
MIN  
25  
2.5  
7
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
4.5  
20  
100  
‐‐  
50  
UNITS  
V
CONDITIONS  
VDS = 0V, IG = 1µA  
VDS = 15V, ID = 1nA  
VDS = 15V, VGS = 0V  
VDS = 0V, VGS = 15V  
VDS = 10V, ID = 1mA  
IG = 1mA, VDS = 0V  
Drain to Source Saturation Current (Note 2)  
Gate Reverse Current (Note 3)  
Gate Operating Current (Note 3)  
Drain to Source On Resistance  
mA  
pA  
pA  
Ω
10  
‐‐  
rDS(on)  
‐‐  
LSJ211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
gfs  
CHARACTERISTIC  
Forward Transconductance  
Output Conductance  
MIN  
6000  
‐‐  
TYP.  
‐‐  
‐‐  
MAX  
12000  
200  
UNITS  
µmho  
CONDITIONS  
VDS = 15V, VGS = 0V , f = 1kHz  
gos  
Click To Buy  
Ciss  
Crss  
en  
Input Capacitance  
Reverse Transfer Capacitance  
Equivalent Noise Voltage  
‐‐  
‐‐  
‐‐  
4
1
10  
‐‐  
‐‐  
‐‐  
pF  
VDS = 15V, VGS = 0V , f = 1MHz  
nV/Hz  
VDS = 15V, VGS = 0V , f = 1kHz  
LSJ211 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
td(on)  
tr  
CHARACTERISTIC  
UNITS  
CONDITIONS  
Turn On Time  
2
2
VDD = 10V  
VGS(H) = 0V  
Turn On Rise Time  
ns  
td(off)  
tf  
Turn Off Time  
6
See Switching Circuit  
Turn Off Fall Time  
15  
Note 1 Absolute maximum ratings are limiting values above which LSJ211 serviceability may be impaired.  
Note 2 Pulse test duration = 2ms  
Note 3 – Approximately doubles for every 10°C increase in TA  
Micross Components Europe  
Available Packages:  
SOT-23 (Top View)  
LSJ211 in SOT-23  
LSJ211 in bare die.  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

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