LSJ211
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J211
FEATURES
The LSJ211 is a n-channel JFET General Purpose
DIRECT REPLACEMENT FOR SILICONIX J211
HIGH GAIN
HIGH INPUT IMPEDANCE
LOW INPUT CAPACITANCE
amplifier with low noise and low leakage.
gfs = 7000µmho MIN
IGSS = 100pA max
Ciss = 5pF
The SOT-23 package is well suited for cost sensitive
applications and mass production.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
(See Packaging Information).
Maximum Temperatures
Storage Temperature
LSJ211 Benefits:
‐55°C to +150°C
‐55°C to +135°C
High gain
Low Leakage
Low Noise
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Derating over temperature
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
360mW
3.27 mW/°C
LSJ211 Applications:
General Purpose Amplifiers
UHV / VHF Amplifiers
Mixers
10mA
Oscillators
‐25V
LSJ211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
VGS(off)
IDSS
IGSS
IG
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
MIN
‐25
‐2.5
7
‐‐
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
MAX
‐‐
‐4.5
20
‐100
‐‐
50
UNITS
V
CONDITIONS
VDS = 0V, IG = ‐1µA
VDS = 15V, ID = 1nA
VDS = 15V, VGS = 0V
VDS = 0V, VGS = ‐15V
VDS = 10V, ID = 1mA
IG = 1mA, VDS = 0V
Drain to Source Saturation Current (Note 2)
Gate Reverse Current (Note 3)
Gate Operating Current (Note 3)
Drain to Source On Resistance
mA
pA
pA
Ω
‐10
‐‐
rDS(on)
‐‐
LSJ211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
gfs
CHARACTERISTIC
Forward Transconductance
Output Conductance
MIN
6000
‐‐
TYP.
‐‐
‐‐
MAX
12000
200
UNITS
µmho
CONDITIONS
VDS = 15V, VGS = 0V , f = 1kHz
gos
Click To Buy
Ciss
Crss
en
Input Capacitance
Reverse Transfer Capacitance
Equivalent Noise Voltage
‐‐
‐‐
‐‐
4
1
10
‐‐
‐‐
‐‐
pF
VDS = 15V, VGS = 0V , f = 1MHz
nV/√Hz
VDS = 15V, VGS = 0V , f = 1kHz
LSJ211 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
td(on)
tr
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
2
2
VDD = 10V
VGS(H) = 0V
Turn On Rise Time
ns
td(off)
tf
Turn Off Time
6
See Switching Circuit
Turn Off Fall Time
15
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ211 serviceability may be impaired.
Note 2 ‐ Pulse test duration = 2ms
Note 3 – Approximately doubles for every 10°C increase in TA
Micross Components Europe
Available Packages:
SOT-23 (Top View)
LSJ211 in SOT-23
LSJ211 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx