LS310 LS311 LS312 LS313
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
VERY HIGH GAIN
hFE≥200@10µA-1mA
TIGHT VBE MATCHING
HIGH fT
|VBE1 -VBE1| = 0.2mV TYP.
250MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Collector
IC
10mA
Current
Maximum Temperatures
Storage Temperature
-55° to +150°C
-55° to +150°C
Operating Junction Temperature
Maximum Power Dissipation
ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
Linear Derating Factor
250mW
500mW
2.3mW/°C 4.3mW/°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS CONDITIONS
BVCBO
BVCEO
Collector to Base Voltage
Collector to Emitter Voltage
25
25
45
45
60
60
45
45
MIN.
MIN.
V
V
IC = 10µA, IE = 0
IC = 1mA, IB = 0
Emitter-Base Breakdown
Voltage
BVEBO
BVCCO
hFE
6.0
45
6.0
45
6.0
60
6.0
MIN.
V
V
IE = 10µA, IC = 0 NOTE 2
IC = 10µA, IE = IB = 0A
IC = 10µA, VCE = 5V
Collector to Collector Voltage
45
MIN.
MIN.
400
1000 MAX.
DC Current Gain
150
150
200
hFE
hFE
DC Current Gain
150
150
150
150
200
200
400
400
MIN.
MIN.
IC = 100µA, VCE = 5V
IC = 1mA, VCE = 5V
IC = 1mA, IB = 0.1mA
IE = 0, VCB = NOTE 3
IC = 0, VCB = 3V
DC Current Gain
VCE(SAT)
ICBO
Collector Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
Out put Capacitance
0.25 0.25 0.25 0.25 MAX.
V
0.2
0.2
2
0.2
0.2
2
0.2
0.2
2
0.2
0.2
2
MAX.
MAX.
MAX.
nA
nA
pF
IEBO
COBO
IE = 0, VCB = 5V
Collector to Collector
Capacitance
Collector to Collector Leakage
Current
Current Gain Bandwidth
Product
CC1C2
IC1C2
fT
2
2
2
2
MAX.
MAX.
pF
µA
VCC = 0V
1.0
200
1.0
200
1.0
200
1.0
200
VCC = NOTE 4
IC = 1mA , VCE = 5V
MIN. MHz
MAX. dB
IC = 100µA , VCE = 5V
BW = 200Hz, RG = 10KΩ
F=1KHz
NF
Narrow Band Noise Figure
3
3
3
3
Linear Integrated Systems
•
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Doc 201121 06/19/2013 Rev#A9 ECN# LS310_11_12_13