Datasheet > LPM2G025-060

LPM2G025-060

更新时间： 2024-10-14 20:05:07

品牌	Logo	应用领域
SENSITRON		栅
页数	文件大小	规格书
6页	54K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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LPM2G025-060 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.81	湿度敏感等级：	1
Base Number Matches：	1

LPM2G025-060 数据手册

SENSITRON

SEMICONDUCTOR

LPX-XGXXX-XXX

STANDARD LOW COST HERMETIC IGBT MODULES

FEATURES:

High Power Density

Low Saturation Voltage (V_CE(sat)

Low Thermal Resistance (R_qJC

)

INDUSTRIAL IGBT PRODUCT MAP

I_C(Amps)

CONFIG-

URATION

V_ECS(V)

100

200

300

LPM1G300-060

Single

Devices

600

1200

600

LPM1G180-120

LPM2G045-060

LPM2G085-060

LPM2G170-060

Half-

Bridge

LPM2G050-120

LPM2G100-120

LPM2G110-120

LPM4G085-060

1200

LPM4G045-060

LPM4G050-120

LPM6G050-060

600

1200

600

H-Bridge

3-Phase

Bridge

LPM2G025-060

1200

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与LPM2G025-060相关器件

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LPM2G050-120	SENSITRON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel,
LPM2G085-060	SENSITRON	获取价格	Insulated Gate Bipolar Transistor, 125A I(C), 600V V(BR)CES, N-Channel,
LPM2M025-100	SENSITRON	获取价格	Power Field-Effect Transistor, 25A I(D), 1000V, 0.55ohm, 2-Element, N-Channel, Silicon, Me
LPM2M035-100	SENSITRON	获取价格	Power Field-Effect Transistor, 35A I(D), 1000V, 0.37ohm, 2-Element, N-Channel, Silicon, Me
LPM2M040-060	SENSITRON	获取价格	Power Field-Effect Transistor, 40A I(D), 600V, 0.18ohm, 2-Element, N-Channel, Silicon, Met
LPM2M060-060	SENSITRON	获取价格	Power Field-Effect Transistor, 60A I(D), 600V, 0.12ohm, 2-Element, N-Channel, Silicon, Met
LPM2M080-030	SENSITRON	获取价格	Power Field-Effect Transistor, 80A I(D), 300V, 0.055ohm, 2-Element, N-Channel, Silicon, Me
LPM2M120-030	SENSITRON	获取价格	Power Field-Effect Transistor, 120A I(D), 300V, 0.035ohm, 2-Element, N-Channel, Silicon, M
LPM2M150-010	SENSITRON	获取价格	Power Field-Effect Transistor, 150A I(D), 100V, 0.013ohm, 2-Element, N-Channel, Silicon, M
LPM2M200-006	SENSITRON	获取价格	Power Field-Effect Transistor, 200A I(D), 60V, 0.005ohm, 2-Element, N-Channel, Silicon, Me