Datasheet > LPM4953

LPM4953

更新时间： 2024-10-15 17:01:03

品牌	Logo	应用领域
微源半导体 - LOWPOWER		/
页数	文件大小	规格书
6页	1162K
描述
SOP-8

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数据手册

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LPM4953 数据手册

Preliminary Datasheet

LPM4953

Dual P -Channel Enhancement Power MOSFET

General Description

Features

 Trench Technology

 PMOS: V_DS=-15V

The LPM4953 integrates two P-Channel enhancement

MOSFET Transistor. It uses advanced trench

technology and design to provide excellent R_DS(ON)

with low gate charge. This device is suitable for using

in DC-DC conversion, power switch and charging

circuit. Standard Product LPM4953 is Pb-free and

Halogen-free.

R_DS(ON)< 65mΩ, I_D=3.6A @ V_GS=-4.5V

R_DS(ON)< 42mΩ, I_D=5A @ V_GS=-10V

 Super high density cell design

 Extremely Low Threshold Voltage

 Small package SOP-8

Applications

Order Information



Driver for Relay, Solenoid, Motor, LED etc.

DC-DC converter circuit

Power Switch

LPM4593 □ □

□

F: Pb-Free

Package Type

SO: SOP-8

Load Switch

Charging

Pin Configurations

Marking Information

Device

Marking

Package

SOP-8

Shipping

3K/REEL

LPM4953

Pin Description

Pin Number

Pin Description

Source Of PMOS2

Gate Of PMOS2

Source Of PMOS1

Gate Of PMOS1

Drain Of PMOS1

Drain Of PMOS2

5,6

7,8

LPM4953-02

Jun.-2012

Email: marketing@lowpowersemi.com

www.lowpowersemi.com

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