Datasheet > LP6836P100-1

LP6836P100-1

更新时间： 2024-09-16 22:46:59

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
2页	26K
描述
Packaged 0.25W Power PHEMT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

LP6836P100-1 数据手册

Filtronic

Solid State

LP6836P100

Packaged 0.25W Power PHEMT

FEATURES

GATE

•

+24.5 dBm Typical Power at 15 GHz

•

12 dB Typical Power Gain at 15 GHz

•

Low Intermodulation Distortion

•

55% Power-Added-Efficiency

•

Color-coded by I_DSSrange

SOURCE

DRAIN

DESCRIPTION AND APPLICATIONS

The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic

High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 360 m Schottky barrier

gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial

structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si₃N₄

passivation and is available in die form, or P70 packages. Packages are color-coded by I_DSSrange.

Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink

transmitters, and medium-haul digital radio transmitters.

The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot

screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.

PERFORMANCE SPECIFICATIONS (T_A= 25°C)

SYMBOLS

PARAMETERS

MIN

TYP

MAX UNITS

I_DSS

Saturated Drain-Source Current

V_DS= 2V V_GS= 0V

LP6836-P100-1 Blue

LP6836-P100-2 Green

LP6836-P100-3 Red

106

100

115

105

125

P_1dB

G_1dB

Output Power at 1dB Gain Compression

V_DS= 8.0V, I_DS= 50% I_DSS

Power Gain at 1dB Gain Compression

V_DS= 8.0V, I_DS= 50% I_DSS

= 15 GHz

23.5

8.5

24.5

dBm

9.5

Power-Added Efficiency

η_ADD

I_MAX

G_M

Maximum Drain-Source Current

Transconductance

V_DS= 2V V_GS= +1V

190

V_DS= 2V V_GS= 0V

V_DS= 2V I_DS= 2mA

V_GS= -5V

V_P

Pinch-Off Voltage

-0.25

-0.8

-1.5

I_GSO

BV_GS

BV_GD

Gate-Source Leakage Current

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

I_GS= 2mA

-11

-12

-15

-16

I_GD= 2mA

Get Package Model

DSS-031 WF

Phone:

Internet: http://www.filtronicsolidstate.com

Fax:

(408) 970-9950

(408) 988-1845

中文翻译

下载PDF

与LP6836P100-1相关器件

型号	品牌	获取价格	描述	数据表
LP6836P100-2	FILTRONIC	获取价格	Packaged 0.25W Power PHEMT
LP6836P100-3	FILTRONIC	获取价格	Packaged 0.25W Power PHEMT
LP6836P70	FILTRONIC	获取价格	PACKAGED MEDIUM POWER PHEMT
LP6836SOT343	FILTRONIC	获取价格	PACKAGED MEDIUM POWER PHEMT
LP6872	FILTRONIC	获取价格	0.5W POWER PHEMT
LP6872P100	FILTRONIC	获取价格	Packaged 0.5W Power PHEMT
LP6872P100-1	FILTRONIC	获取价格	Packaged 0.5W Power PHEMT
LP6872P100-2	FILTRONIC	获取价格	Packaged 0.5W Power PHEMT
LP6872P100-3	FILTRONIC	获取价格	Packaged 0.5W Power PHEMT
LP6B-SERIES	ETC	获取价格	Analog IC