Datasheet > LP6872P100

LP6872P100

更新时间： 2024-11-27 22:21:59

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
2页	26K
描述
Packaged 0.5W Power PHEMT

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中文翻译

获取价格

数据手册

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LP6872P100 数据手册

Filtronic

Solid State

LP6872P100

Packaged 0.5W Power PHEMT

GATE

FEATURES

•

+27 dBm Typical Power at 15 GHz

•

11 dB Typical Power Gain at 15 GHz

•

Low Intermodulation Distortion

SOURCE

50% Power-Added-Efficiency

•

Color-coded by I_DSSrange

DRAIN

DESCRIPTION AND APPLICATIONS

The LP6872P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic

High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 720 m Schottky barrier

gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial

structure and processing have been optimized for reliable high-power applications. The LP6872 also features Si₃N₄

passivation and is available in die form.

Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink

transmitters, and medium-haul digital radio transmitters. Space level screening to FSS JANS grade is also available.

The LP6872-P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot

screening is patterned after MIL-STD-19500, JANC grade.

PERFORMANCE SPECIFICATIONS (T_A= 25°C)

SYMBOLS

PARAMETERS

MIN

TYP

MAX

UNITS

I_DSS

Saturated Drain-Source Current

V_DS= 2V V_GS= 0V

LP6872-P100-1 BLUE

LP6872-P100-2 GREEN

LP6872-P100-3 RED

180

207

234

195

220

245

206

233

260

P_1dB

G_1dB

Output Power at 1dB Gain Compression

V_DS= 8.0V, I_DS= 50% I_DSS

Power Gain at 1dB Gain Compression

V_DS= 8.0V, I_DS= 50% I_DSS

= 15 GHz

25.5

8.0

27.0

dBm

9.5

Power-Added Efficiency

η_ADD

I_MAX

G_M

Maximum Drain-Source Current

Transconductance

V_DS= 2V V_GS= +1V

V_DS= 2V V_GS= 0V

V_DS= 2V I_DS= 4mA

V_GS= -5V

385

220

-1.2

170

V_P

Pinch-Off Voltage

-0.25

-2.0

I_GSO

BV_GS

BV_GD

Gate-Source Leakage Current

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

I_GS= 4mA

-12

-15

-16

I_GD= 4mA

Get Package Model

DSS-033 WF

Phone:

Internet: http://www.filtronicsolidstate.com

Fax:

(408) 988-1845

(408) 970-9950

中文翻译

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