LP6836SOT343

更新时间： 2024-11-08 22:21:15

品牌	Logo	应用领域
FILTRONIC		晶体晶体管
页数	文件大小	规格书
2页	70K
描述
PACKAGED MEDIUM POWER PHEMT

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数据手册

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LP6836SOT343 数据手册

PRELIMINARY DATA SHEET

LP 6 8 3 6 S OT3 4 3

P ACKAGED MEDIUM P OWER P HEMT

FEATURES

0.5 dB Noise Figure at 2 GHz

19 dBm P-1dB 2 GHz, 19 dBm at 6 GHz

20 dB Power Gain at 2 GHz, 10 dB at 6 GHz

70% Power-Added-Efficiency

DES CRIP TION AND AP P LICATIONS

The LP6836SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

transistor (pHEMT) intended for applications requiring medium output power and/or high dynamic

range.

It utilizes a 0.25 mm x 360 mm Schottky barrier gate, defined by electron-beam

photolithography. The LP6836’s active areas are passivated with Si₃N₄, and the SOT343 (also

known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-

mount package.

The LP6836SOT343 is designed for commercial systems for use in low noise amplifiers and

oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it

appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for

WLAN and ISM band spread spectrum applications.

ELECTRICAL S P ECIFICATIONS @ T_{Am b ie n t}= 2 5 °C

Parameter

Symbol

I_DSS

Test Conditions

Min

Typ Max Units

Saturated Drain-Source Current

Power at 1-dB Compression

V_DS= 2 V; V_GS= 0 V

125

dBm

P-1dB

G-1dB

f=2GHz; V_DS= 3 V; I_DS= 50% I_DSS

Power Gain at 1-dB

Compression

Power-Added Efficiency

PAE

f=2GHz; V_DS= 3 V; I_DS= 50% I_DSS

;

P_OUT= 19.5 dBm

Noise Figure

f=2GHz; V_DS= 3V; I_DS= 25% I_DSS

f=2GHz; V_DS= 3V; I_DS= 50% I_DSS

V_DS= 2 V; V_GS= 0 V

V_GS= -5 V

0.5

0.7

100

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

G_M

I_GSO

V_P

V_DS= 2 V; I_DS= 2 mA

I_GS= 2 mA

-0.25

-2.0

Gate-Source Breakdown

Voltage Magnitude

|V_BDGS

Gate-Drain Breakdown

Voltage Magnitude

|V_BDGD

I_GD= 2 mA

P h o n e : (408) 988-1845

Fa x: (408) 970-9950

h ttp :// www.filss.com

Re vis e d : 1/20/01

Em a il: sales@filss.com

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