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LP2998MAE/NOPB PDF预览

LP2998MAE/NOPB

更新时间: 2024-11-02 11:08:07
品牌 Logo 应用领域
德州仪器 - TI 驱动双倍数据速率光电二极管接口集成电路总线通信稳压器驱动程序和接口
页数 文件大小 规格书
26页 1179K
描述
具有关断引脚的 1.5A DDR 终端稳压器 | D | 8 | -40 to 125

LP2998MAE/NOPB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:0.71差分输出:NO
接口集成电路类型:OTHER TERMINATORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1功能数量:1
信号线数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压:5.5 V
最小供电电压:2.2 V标称供电电压:2.5 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
Base Number Matches:1

LP2998MAE/NOPB 数据手册

 浏览型号LP2998MAE/NOPB的Datasheet PDF文件第2页浏览型号LP2998MAE/NOPB的Datasheet PDF文件第3页浏览型号LP2998MAE/NOPB的Datasheet PDF文件第4页浏览型号LP2998MAE/NOPB的Datasheet PDF文件第5页浏览型号LP2998MAE/NOPB的Datasheet PDF文件第6页浏览型号LP2998MAE/NOPB的Datasheet PDF文件第7页 
LP2998  
www.ti.com  
SNVS521I DECEMBER 2007REVISED APRIL 2013  
LP2998 DDR-I and DDR-II Termination Regulator  
Check for Samples: LP2998  
1
FEATURES  
DESCRIPTION  
The LP2998 linear regulator is designed to meet  
JEDEC SSTL-2 and JEDEC SSTL-18 specifications  
for termination of DDR1-SDRAM and DDR-II  
2
Source and Sink Current  
Low Output Voltage Offset  
No External Resistors Required  
Linear Topology  
memory. The device contains  
a
high-speed  
operational amplifier to provide excellent response to  
load transients. The output stage prevents shoot  
through while delivering 1.5A continuous current as  
required for DDR1-SDRAM termination, and 0.5A  
continuous current as required for DDR-II termination.  
The LP2998 also incorporates a VSENSE pin to provide  
superior load regulation and a VREF output as a  
reference for the chipset and DIMMs.  
Suspend to Ram (STR) Functionality  
Low External Component Count  
Thermal Shutdown  
Available in SOIC-8, SO PowerPAD-8 Packages  
APPLICATIONS  
An additional feature found on the LP2998 is an  
active low shutdown (SD) pin that provides Suspend  
To RAM (STR) functionality. When SD is pulled low,  
DDR-I, DDR-II and DDR-III Termination Voltage  
SSTL-18 Termination  
the VTT output will tri-state providing  
a
high  
SSTL-2 and SSTL-3 Termination  
HSTL Termination  
impedance output, while VREF remains active. A  
power savings advantage can be obtained in this  
mode through lower quiescent current.  
Typical Application Circuit  
LP2998  
V
= 0.9V  
V
REF  
REF  
SD  
AV  
SD  
+
+
C
C
REF  
AV = 2.5V  
IN  
IN  
V
VSENSE  
V
= 1.8V  
DDQ  
DDQ  
PV  
IN  
V
= 0.9V  
V
TT  
TT  
+
GND  
C
OUT  
IN  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2013, Texas Instruments Incorporated  

LP2998MAE/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LP2998MAX/NOPB TI

完全替代

具有关断引脚的 1.5A DDR 终端稳压器 | D | 8 | -40 to 125
LP2998MAE TI

完全替代

LP2998 DDR-I and DDR-II Termination Regulator
LP2998MA/NOPB TI

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具有关断引脚的 1.5A DDR 终端稳压器 | D | 8 | -40 to 125

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