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LN152 PDF预览

LN152

更新时间: 2024-01-02 00:50:09
品牌 Logo 应用领域
松下 - PANASONIC 二极管
页数 文件大小 规格书
2页 40K
描述
GaAs Infrared Light Emitting Diode

LN152 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PACKAGE-2Reach Compliance Code:unknown
HTS代码:8541.40.20.00风险等级:5.87
配置:SINGLE最大正向电流:0.1 A
JESD-609代码:e0功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:INFRARED LED标称输出功率:10 mW
峰值波长:950 nm形状:ROUND
尺寸:4.2 mm端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

LN152 数据手册

 浏览型号LN152的Datasheet PDF文件第2页 
Infrared Light Emitting Diodes  
LN152  
GaAs Infrared Light Emitting Diode  
Unit : mm  
For optical control systems  
Features  
High-power output, high-efficiency : PO = 10 mW (typ.)  
2-ø0.45±0.05  
Wide directivity, matched for external optical systems : θ = 100 deg.  
Infrared light emission close to monochromatic light :  
1.0  
λP = 950 nm (typ.)  
0.1  
Optimum for mesuring instruments and control equipments  
in conbination with silicon photodetectors  
±
1.0  
High-speed modulation  
2
1
Absolute Maximum Ratings (Ta = 25˚C)  
2.54±0.2  
Parameter  
Symbol  
Ratings  
160  
Unit  
mW  
mA  
A
1: Anode  
2: Cathode  
Power dissipation  
PD  
Forward current (DC)  
Pulse forward current  
Reverse voltage (DC)  
Operating ambient temperature  
Storage temperature  
IF  
100  
*
IFP  
1.5  
VR  
Topr  
Tstg  
3
V
–25 to +85  
–30 to +100  
˚C  
˚C  
*
f = 100 Hz, Duty cycle = 0.1 %  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
Conditions  
min  
typ  
10  
max  
Unit  
mW  
nm  
nm  
V
PO  
λP  
∆λ  
VF  
IR  
Ct  
tr  
IF = 100mA  
5
Peak emission wavelength  
Spectral half band width  
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between pins  
Rise time  
IF = 100mA  
IF = 100mA  
IF = 100mA  
VR = 3V  
950  
50  
1.3  
1.6  
10  
µA  
pF  
VR = 0V, f = 1MHz  
60  
1
µs  
IFP = 100mA  
Fall time  
tf  
1
µs  
Half-power angle  
θ
The angle in which radiant intencity is 50%  
100  
deg.  
1

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