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LN172 PDF预览

LN172

更新时间: 2024-09-29 22:46:59
品牌 Logo 应用领域
松下 - PANASONIC 红外LED光电二极管
页数 文件大小 规格书
2页 39K
描述
GaAlAs Infrared Light Emitting Diode

LN172 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownHTS代码:8541.40.20.00
风险等级:5.92Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE
最大正向电流:0.1 AJESD-609代码:e0
功能数量:1最高工作温度:85 °C
最低工作温度:-25 °C光电设备类型:INFRARED LED
标称输出功率:12 mW峰值波长:900 nm
形状:ROUND尺寸:4.2 mm
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

LN172 数据手册

 浏览型号LN172的Datasheet PDF文件第2页 
Infrared Light Emitting Diodes  
LN172  
GaAlAs Infrared Light Emitting Diode  
Unit : mm  
+0.2  
ø4.2  
–0.1  
For optical control systems  
Features  
High-power output, high-efficiency : PO = 12 mW (typ.)  
Light emitting spectrum suited for silicon photodetectors :  
λP = 900 nm (typ.)  
2-ø0.45±0.05  
Good optical power output linearity with respect to input current  
Wide directivity : θ = 100 deg. (typ.)  
1.0  
±
0.15  
0.15  
±
1.0  
Long lifetime, high reliability  
45  
±
3˚  
2
1
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol  
Ratings  
Unit  
mW  
mA  
A
2.54±0.25  
1: Cathode  
2: Anode  
Power dissipation  
PD  
170  
Forward current (DC)  
Pulse forward current  
Reverse voltage (DC)  
Operating ambient temperature  
Storage temperature  
IF  
100  
*
IFP  
2
VR  
Topr  
Tstg  
3
V
–25 to +85  
–30 to +100  
˚C  
˚C  
*
f = 100 Hz, Duty cycle = 0.1 %  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
PO  
Conditions  
min  
typ  
12  
max  
Unit  
mW  
nm  
nm  
V
IF = 100mA  
7
Peak emission wavelength  
Spectral half band width  
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between pins  
Response time  
λP  
IF = 100mA  
900  
70  
∆λ  
IF = 100mA  
VF  
IF = 100mA  
1.4  
1.7  
10  
IR  
VR = 3V  
µA  
pF  
Ct  
VR = 0V, f = 1MHz  
IF = 100mA  
50  
tr, tf  
θ
700  
100  
ns  
Half-power angle  
The angle in which radiant intencity is 50%  
deg.  
1

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