Datasheet > LN175

LN175

更新时间： 2024-09-29 22:46:59

品牌	Logo	应用领域
松下 - PANASONIC		二极管
页数	文件大小	规格书
2页	45K
描述
GaAlAs Infrared Light Emitting Diode

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中文翻译

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技术参数
数据手册

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LN175 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	PACKAGE-2
Reach Compliance Code：	unknown	HTS代码：	8541.40.20.00
风险等级：	5.92	其他特性：	SIDE VIEW
配置：	SINGLE	最大正向电流：	0.1 A
JESD-609代码：	e0	功能数量：	1
最高工作温度：	85 °C	最低工作温度：	-25 °C
光电设备类型：	INFRARED LED	标称输出功率：	12 mW
峰值波长：	900 nm	形状：	RECTANGULAR
尺寸：	3.5 mm	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

LN175 数据手册

Infrared Light Emitting Diodes

LN175

GaAlAs Infrared Light Emitting Diode

Unit : mm

For optical control systems

2.1±0.15

4.5±0.15

3.5±0.15

1.6±0.15

0.8±0.1

Features

High-power output, high-efficiency : P_O= 12 mW (typ.)

Emitted light spectrum suited for silicon photodetectors :

λ_P= 900 nm (typ.)

Good radiant power output linearity with respect to input current

2-1.2±0.3

Wide directivity : θ = 120 deg. (typ.)

2-0.45±0.15

0.45±0.15

2.54

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

Ratings

Unit

1: Cathode

2: Anode

Power dissipation

P_D

170

Forward current (DC)

Pulse forward current

Reverse voltage (DC)

Operating ambient temperature

Storage temperature

I_F

100

I_FP

V_R

T_opr

T_stg

–25 to +85

– 40 to +100

˚C

f = 100 Hz, Duty cycle = 0.1 %

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Radiant power

Symbol

P_O

Conditions

min

typ

max

Unit

I_F= 100mA

900

Peak emission wavelength

Spectral half band width

Forward voltage (DC)

Reverse current (DC)

Capacitance between pins

Response time

λ_P

I_F= 100mA

∆λ

I_F= 100mA

V_F

I_F= 100mA

1.4

1.7

I_R

V_R= 3V

µA

C_t

V_R= 0V, f = 1MHz

I_F= 100mA

t_r, t_f

700

120

Half-power angle

The angle in which radiant intencity is 50%

deg.

中文翻译

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