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LMV721M5X/NOPB PDF预览

LMV721M5X/NOPB

更新时间: 2024-09-16 02:58:27
品牌 Logo 应用领域
德州仪器 - TI 放大器信息通信管理光电二极管
页数 文件大小 规格书
25页 1236K
描述
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

LMV721M5X/NOPB 数据手册

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LMV721-N, LMV722-N  
www.ti.com  
SNOS414I AUGUST 1999REVISED AUGUST 2013  
LMV721-N/LMV722 10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier  
Check for Samples: LMV721-N, LMV722-N  
1
FEATURES  
DESCRIPTION  
The LMV721-N (Single) and LMV722 (Dual) are low  
noise, low voltage, and low power op amps, that can  
be designed into a wide range of applications. The  
LMV721-N/LMV722 has a unity gain bandwidth of  
10MHz, a slew rate of 5V/us, and a quiescent current  
of 930uA/amplifier at 2.2V.  
2
(For Typical, 5 V Supply Values; Unless  
Otherwise Noted)  
Ensured 2.2V and 5.0V Performance  
Low Supply Current LMV721-N/2  
930µA/Amplifier at 2.2V  
High Unity-Gain Bandwidth 10MHz  
Rail-to-Rail Output Swing  
The LMV721-N/722 are designed to provide optimal  
performance in low voltage and low noise systems.  
They provide rail-to-rail output swing into heavy  
loads. The input common-mode voltage range  
includes ground, and the maximum input offset  
voltage are 3.5mV (Over Temp) for the LMV721-  
N/LMV722. Their capacitive load capability is also  
good at low supply voltages. The operating range is  
from 2.2V to 5.5V.  
at 600Load 120mV from Either Rail at  
2.2V  
at 2kLoad 50mV from Either Rail at 2.2V  
Input Common Mode Voltage Range Includes  
Ground  
Silicon Dust, SC70-5 Package 2.0x2.0x1.0 mm  
The chip is built with TI's advanced Submicron  
Silicon-Gate BiCMOS process. The single version,  
LMV721-N, is available in 5 pin SOT-23 and a SC70  
(new) package. The dual version, LMV722, is  
available in an SOIC-8 and VSSOP-8 package.  
Input Voltage Noise 9 nV/Hz at f = 1KHz  
APPLICATIONS  
Cellular an Cordless Phones  
Active Filter and Buffers  
Laptops and PDAs  
Battery Powered Electronics  
Typical Application  
Figure 1. A Battery Powered Microphone Preamplifier  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1999–2013, Texas Instruments Incorporated  

LMV721M5X/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LMV721M5/NOPB TI

完全替代

Single, 5.5-V, 10-MHz, low noise (8.5-nV/√Hz)
LMV721M5X TI

完全替代

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier
LMV721M5 TI

类似代替

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

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