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LMV1015URX-15 PDF预览

LMV1015URX-15

更新时间: 2024-11-18 03:22:59
品牌 Logo 应用领域
美国国家半导体 - NSC /
页数 文件大小 规格书
11页 696K
描述
Built-in Gain IC’s for High Sensitivity 2-Wire Microphones

LMV1015URX-15 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:VFBGA, BGA4,2X2,20Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.4标称带宽:95000 kHz
商用集成电路类型:AUDIO PREAMPLIFIER增益:15.6 dB
谐波失真:0.13%JESD-30 代码:R-PBGA-B4
JESD-609代码:e1长度:1.051 mm
湿度敏感等级:1信道数量:1
功能数量:1端子数量:4
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA4,2X2,20封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:0.4 mm子类别:Audio/Video Amplifiers
最大压摆率:0.325 mA最大供电电压 (Vsup):5 V
最小供电电压 (Vsup):2 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.5 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:0.975 mmBase Number Matches:1

LMV1015URX-15 数据手册

 浏览型号LMV1015URX-15的Datasheet PDF文件第2页浏览型号LMV1015URX-15的Datasheet PDF文件第3页浏览型号LMV1015URX-15的Datasheet PDF文件第4页浏览型号LMV1015URX-15的Datasheet PDF文件第5页浏览型号LMV1015URX-15的Datasheet PDF文件第6页浏览型号LMV1015URX-15的Datasheet PDF文件第7页 
May 2005  
LMV1015 Analog Series:  
Built-in Gain IC’s for High Sensitivity 2-Wire  
Microphones  
General Description  
Features  
The LMV1015 is an audio amplifier series for small form  
factor electret microphones. This 2-wire portfolio is designed  
to replace the JFET amplifier. The LMV1015 series is ideally  
suited for applications requiring high signal integrity in the  
presence of ambient or RF noise, such as in cellular com-  
munications. The LMV1015 audio amplifiers are guaranteed  
to operate over a 2.2V to 5.0V supply voltage range with  
fixed gains of 15.6 dB and 23.8 dB. The devices offer excel-  
lent THD, gain accuracy and temperature stability as com-  
pared to a JFET microphone.  
(Typical LMV1015-15, 2.2V supply, RL = 2.2 k, C = 2.2 µF,  
VIN = 18 mVPP, unless otherwise specified)  
n Supply voltage  
n Supply current  
n Signal to noise ratio (A-weighted)  
n Output voltage noise (A-weighted)  
n Total harmonic distortion  
n Voltage gain  
— LMV1015-15  
— LMV1015-25  
2V - 5V  
<
180 µA  
60 dB  
−89 dBV  
0.09%  
15.6 dB  
23.8 dB  
−40˚C to 85˚C  
The LMV1015 series enables a two-pin electret microphone  
solution, which provides direct pin-to-pin compatibility with  
the existing older JFET market.  
n Temperature range  
n Large Dome 4-Bump micro SMD package with improved  
adhesion technology.  
National Semiconductors built-in gain families are offered in  
extremely thin space saving 4-bump micro SMD packages  
(0.3 mm maximum). The LMV1015XR is designed for 1.0  
mm ECM canisters and thicker. These extremely miniature  
packages have the Large Dome Bump (LDB) technology.  
This micro SMD technology is designed for microphone  
PCBs requiring 1 kg adhesion criteria.  
Applications  
n Cellular phones  
n Headsets  
n Mobile communications  
n Automotive accessories  
n PDAs  
n Accessory microphone products  
Schematic Diagram  
Built-In Gain Electret Microphone  
20128902  
20128901  
© 2005 National Semiconductor Corporation  
DS201289  
www.national.com  

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