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LM9061MX

更新时间： 2024-01-06 10:53:26
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
26页 1277K
描述
BUF OR INV BASED MOSFET DRIVER, PDSO8, SOIC-8

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LM9061MX 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：SOIC-8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.3高边驱动器：YES
输入特性：SCHMITT TRIGGER接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
长度：4.9 mm湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
输出特性：TOTEM-POLE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：235
电源：7/20 V认证状态：Not Qualified
座面最大高度：1.75 mm子类别：MOSFET Drivers
最大压摆率：40 mA最大供电电压：26 V
最小供电电压：7 V标称供电电压：14 V
表面贴装：YES技术：BIMOS
温度等级：AUTOMOTIVE端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
断开时间：10000 µs接通时间：1500 µs
宽度：3.9 mm

LM9061MX 数据手册

 浏览型号LM9061MX的Datasheet PDF文件第2页浏览型号LM9061MX的Datasheet PDF文件第3页浏览型号LM9061MX的Datasheet PDF文件第4页浏览型号LM9061MX的Datasheet PDF文件第5页浏览型号LM9061MX的Datasheet PDF文件第6页浏览型号LM9061MX的Datasheet PDF文件第7页 
LM9061  
www.ti.com  
SNOS738F –APRIL 1995–REVISED APRIL 1995  
LM9061 Power MOSFET Driver with Lossless Protection  
Check for Samples: LM9061  
1
FEATURES  
DESCRIPTION  
The LM9061 is a charge-pump device which provides  
the gate drive to any size external power MOSFET  
configured as a high side driver or switch. A CMOS  
logic compatible ON/OFF input controls the output  
gate drive voltage. In the ON state, the charge pump  
voltage, which is well above the available VCC supply,  
is directly applied to the gate of the MOSFET. A built-  
in 15V zener clamps the maximum gate to source  
voltage of the MOSFET. When commanded OFF a  
110 µA current sink discharges the gate capacitances  
of the MOSFET for a gradual turn-OFF characteristic  
to minimize the duration of inductive load transient  
voltages and further protect the power MOSFET.  
2
•
Built-In Charge Pump for Gate Overdrive of  
High Side Drive Applications  
•
•
•
•
Lossless Protection of the Power MOSFET  
Programmable MOSFET Protection Voltage  
Programmable Delay of Protection Latch-OFF  
Fast Turn-ON (1.5 ms Max with Gate  
Capacitance of 25000 pF)  
•
•
•
•
Overvoltage Shut OFF with VCC > 26V  
Withstands 60V Supply Transients  
CMOS Logic Compatible ON/OFF Control Input  
Available in 8-pin SOIC (SO-8) Package  
Lossless protection of the power MOSFET is a key  
feature of the LM9061. The voltage drop (VDS) across  
the power device is continually monitored and  
compared against an externally programmable  
threshold voltage. A small current sensing resistor in  
series with the load, which causes a loss of available  
energy, is not required for the protection circuitry.  
Should the VDS voltage, due to excessive load  
current, exceed the threshold voltage, the output is  
latched OFF in a more gradual fashion (through a 10  
µA output current sink) after programmable delay  
time interval.  
APPLICATIONS  
•
•
•
•
Valve, Relay and Solenoid Drivers  
Lamp Drivers  
DC Motor PWM Drivers  
Logic Controlled Power Supply Distribution  
Switch  
•
Electronic Circuit Breaker  
The LM9061 has a wide operating temperature range  
of −40°C to +125°C, remains operational with VCC up  
to 26V, and can withstand 60V power supply  
transients. The LM9061 is available in an 8-pin small  
outline surface mount package.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1995, Texas Instruments Incorporated  
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