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LM9061M/NOPB PDF预览

LM9061M/NOPB

更新时间： 2024-11-24 11:13:55
品牌 Logo 应用领域
德州仪器 - TI PC驱动控制器光电二极管接口集成电路驱动器
页数 文件大小 规格书
35页 2248K
描述
7V 至 26V 高侧保护控制器 | D | 8 | -40 to 125

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中文翻译

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LM9061M/NOPB 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：0.86Samacsys Confidence：4
Samacsys Status：ReleasedSamacsys PartID：414868
Samacsys Pin Count：8Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：D (R-PDSO-G8)
Samacsys Released Date：2017-06-28 04:12:30Is Samacsys：N
高边驱动器：YES输入特性：STANDARD
接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
湿度敏感等级：1功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260电源：7/25 V
认证状态：Not Qualified座面最大高度：1.75 mm
子类别：MOSFET Drivers最大压摆率：40 mA
最大供电电压：26 V最小供电电压：7 V
标称供电电压：14 V表面贴装：YES
技术：BIMOS温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：10000 µs
接通时间：1500 µs宽度：3.9 mm
Base Number Matches：1

LM9061M/NOPB 数据手册

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Support &  
Community  
Product  
Folder  
Order  
Now  
Tools &  
Software  
Technical  
Documents  
LM9061, LM9061-Q1  
SNOS738I –APRIL 1995–REVISED JANUARY 2017  
LM9061 and LM9061-Q1 High-Side Protection Controller  
1 Features  
3 Description  
The LM9061 family consists of charge-pump devices  
1
•
•
Qualified for Automotive Applications  
which provides the gate drive to an external power  
MOSFET of any size configured as a high-side driver  
or switch. This includes multiple parallel connected  
MOSFETs for very high current applications. A  
CMOS logic-compatible ON and OFF input controls  
the output gate drive voltage. In the ON state, the  
charge pump voltage, which is well above the  
available VCC supply, is directly applied to the gate of  
the MOSFET. A built-in 15-V Zener clamps the  
maximum gate to source voltage of the MOSFET.  
When commanded OFF a 110-µA current sink  
discharges the gate capacitances of the MOSFET for  
a gradual turnoff characteristic to minimize the  
duration of inductive load transient voltages and  
further protect the power MOSFET.  
AEC-Q100 Qualified With the Following Results:  
–
–
Device HBM ESD Classification Level 2  
Device CDM ESD Classification Level C4B  
•
•
•
Withstands 60-V Supply Transients  
Overvoltage Shut-OFF With VCC > 30 V  
Lossless Overcurrent Protection Latch-OFF  
–
–
Current Sense Resistor is Not Required  
Minimizes Power Loss With High Current  
Loads  
•
•
Programmable Delay of Protection Latch-OFF  
Gradual Turnoff to Minimize Inductive Load  
Transient Voltages  
Lossless protection of the power MOSFET is a key  
feature of the LM9061. The voltage drop (VDS) across  
the power device is continually monitored and  
compared against an externally programmable  
threshold voltage. A small current-sensing resistor in  
series with the load, which causes a loss of available  
energy, is not required for the protection circuitry. If  
the VDS voltage, due to excessive load current,  
exceeds the threshold voltage, the output is latched  
OFF in a more gradual fashion (through a 10-µA  
output current sink) after a programmable delay time  
interval.  
•
CMOS Logic-Compatible ON and OFF Control  
Input  
2 Applications  
•
•
•
•
•
•
Transmission Control Units (TCU)  
Engine Control Units (ECU)  
Valve, Relay, and Solenoid Drivers  
Lamp Drivers  
DC Motor PWM Drivers  
Logic-Controlled Power Supply Distribution  
Switches  
Device Information(1)  
•
•
Electronic Circuit Breakers  
High-Power Audio Speakers  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
LM9061, LM9061-Q1  
SOIC (8)  
4.9 mm × 3.91 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
High-Side Driving and Protection to a Connected Load  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
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中文翻译

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LM9061M/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LM9061MX/NOPB TI

完全替代

 7V 至 26V 高侧保护控制器 | D | 8 | -40 to 125
LM9061MX TI

完全替代

 BUF OR INV BASED MOSFET DRIVER, PDSO8, SOIC-8
LM9061M TI

类似代替

 High-Side Protection Controller 8-SOIC -40 to 125

与LM9061M/NOPB相关器件

型号 品牌 获取价格 描述 数据表
LM9061MX TI

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 		BUF OR INV BASED MOSFET DRIVER, PDSO8, SOIC-8
LM9061MX/NOPB NSC

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 		IC BUF OR INV BASED MOSFET DRIVER, PDSO8, SOIC-8, MOSFET Driver
LM9061MX/NOPB TI

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 		7V 至 26V 高侧保护控制器 | D | 8 | -40 to 125
LM9061N NSC

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 		Power MOSFET Driver with Lossless Protection
LM9061-Q1 TI

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 		汽车类 7V 至 26V 高侧保护控制器
LM9061QDRQ1 TI

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 		汽车类 7V 至 26V 高侧保护控制器 | D | 8 | -40 to 125
LM9070 NSC

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 		Low-Dropout System Voltage Regulator with Keep-Alive ON/OFF Control
LM9070 TI

获取价格

 		Low-Dropout System Voltage Regulator
LM9070M NSC

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 		Low-Dropout System Voltage Regulator with Keep-Alive ON/OFF Control
LM9070M ROCHESTER

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 		5 V FIXED POSITIVE LDO REGULATOR, 0.8 V DROPOUT, PDSO20, 0.300 INCH, SOP-20

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