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LM9061QDRQ1 PDF预览

LM9061QDRQ1

更新时间: 2024-11-24 11:15:23
品牌 Logo 应用领域
德州仪器 - TI 驱动控制器光电二极管接口集成电路驱动器
页数 文件大小 规格书
35页 2248K
描述
汽车类 7V 至 26V 高侧保护控制器 | D | 8 | -40 to 125

LM9061QDRQ1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:1.78
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm湿度敏感等级:3
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
筛选级别:AEC-Q100座面最大高度:1.75 mm
最大压摆率:10 mA最大供电电压:26 V
最小供电电压:7 V标称供电电压:14 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
断开时间:1500 µs接通时间:10000 µs
宽度:3.895 mmBase Number Matches:1

LM9061QDRQ1 数据手册

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LM9061, LM9061-Q1  
SNOS738I APRIL 1995REVISED JANUARY 2017  
LM9061 and LM9061-Q1 High-Side Protection Controller  
1 Features  
3 Description  
The LM9061 family consists of charge-pump devices  
1
Qualified for Automotive Applications  
which provides the gate drive to an external power  
MOSFET of any size configured as a high-side driver  
or switch. This includes multiple parallel connected  
MOSFETs for very high current applications. A  
CMOS logic-compatible ON and OFF input controls  
the output gate drive voltage. In the ON state, the  
charge pump voltage, which is well above the  
available VCC supply, is directly applied to the gate of  
the MOSFET. A built-in 15-V Zener clamps the  
maximum gate to source voltage of the MOSFET.  
When commanded OFF a 110-µA current sink  
discharges the gate capacitances of the MOSFET for  
a gradual turnoff characteristic to minimize the  
duration of inductive load transient voltages and  
further protect the power MOSFET.  
AEC-Q100 Qualified With the Following Results:  
Device HBM ESD Classification Level 2  
Device CDM ESD Classification Level C4B  
Withstands 60-V Supply Transients  
Overvoltage Shut-OFF With VCC > 30 V  
Lossless Overcurrent Protection Latch-OFF  
Current Sense Resistor is Not Required  
Minimizes Power Loss With High Current  
Loads  
Programmable Delay of Protection Latch-OFF  
Gradual Turnoff to Minimize Inductive Load  
Transient Voltages  
Lossless protection of the power MOSFET is a key  
feature of the LM9061. The voltage drop (VDS) across  
the power device is continually monitored and  
compared against an externally programmable  
threshold voltage. A small current-sensing resistor in  
series with the load, which causes a loss of available  
energy, is not required for the protection circuitry. If  
the VDS voltage, due to excessive load current,  
exceeds the threshold voltage, the output is latched  
OFF in a more gradual fashion (through a 10-µA  
output current sink) after a programmable delay time  
interval.  
CMOS Logic-Compatible ON and OFF Control  
Input  
2 Applications  
Transmission Control Units (TCU)  
Engine Control Units (ECU)  
Valve, Relay, and Solenoid Drivers  
Lamp Drivers  
DC Motor PWM Drivers  
Logic-Controlled Power Supply Distribution  
Switches  
Device Information(1)  
Electronic Circuit Breakers  
High-Power Audio Speakers  
PART NUMBER  
PACKAGE  
BODY SIZE (NOM)  
LM9061, LM9061-Q1  
SOIC (8)  
4.9 mm × 3.91 mm  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
High-Side Driving and Protection to a Connected Load  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 

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