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LM9061N PDF预览

LM9061N

更新时间： 2024-11-22 22:31:11
品牌 Logo 应用领域
美国国家半导体 - NSC 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
14页 236K
描述
Power MOSFET Driver with Lossless Protection

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中文翻译

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LM9061N 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：DIP-8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.74Is Samacsys：N
高边驱动器：YES输入特性：SCHMITT TRIGGER
接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码：R-PDIP-T8
JESD-609代码：e0长度：9.817 mm
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
输出特性：TOTEM-POLE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：7/25 V认证状态：Not Qualified
座面最大高度：5.08 mm子类别：MOSFET Drivers
最大压摆率：40 mA最大供电电压：26 V
最小供电电压：7 V标称供电电压：14 V
表面贴装：NO技术：BIMOS
温度等级：AUTOMOTIVE端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
断开时间：10000 µs接通时间：1500 µs
宽度：7.62 mmBase Number Matches：1

LM9061N 数据手册

 浏览型号LM9061N的Datasheet PDF文件第2页浏览型号LM9061N的Datasheet PDF文件第3页浏览型号LM9061N的Datasheet PDF文件第4页浏览型号LM9061N的Datasheet PDF文件第5页浏览型号LM9061N的Datasheet PDF文件第6页浏览型号LM9061N的Datasheet PDF文件第7页 
April 1995  
LM9061  
Power MOSFET Driver with Lossless Protection  
General Description  
Features  
Y
Built-in charge pump for gate overdrive of high side  
drive applications  
The LM9061 is a charge-pump device which provides the  
gate drive to any size external power MOSFET configured  
as a high side driver or switch. A CMOS logic compatible  
ON/OFF input controls the output gate drive voltage. In the  
ON state, the charge pump voltage, which is well above the  
Y
Y
Y
Y
Lossless protection of the power MOSFET  
Programmable MOSFET protection voltage  
Programmable delay of protection latch-OFF  
Fast turn-ON (1.5 ms max with gate capacitance of  
25000 pF)  
available V  
CC  
supply, is directly applied to the gate of the  
MOSFET. A built-in 15V zener clamps the maximum gate to  
source voltage of the MOSFET. When commanded OFF a  
110 mA current sink discharges the gate capacitances of  
the MOSFET for a gradual turn-OFF characteristic to mini-  
mize the duration of inductive load transient voltages and  
further protect the power MOSFET.  
Y
Y
Y
Y
Y
k
Undervoltage shut OFF with V  
7V  
CC  
l
Overvoltage shut OFF with V  
CC  
Withstands 60V supply transients  
26V  
CMOS logic compatible ON/OFF control input  
Surface mount and dual in-line packages available  
Lossless protection of the power MOSFET is a key feature  
of the LM9061. The voltage drop (V ) across the power  
DS  
Applications  
Y
device is continually monitored and compared against an  
externally programmable threshold voltage. A small current  
sensing resistor in series with the load, which causes a loss  
of available energy, is not required for the protection circuit-  
Valve, relay and solenoid drivers  
Y
Lamp drivers  
Y
DC motor PWM drivers  
ry. Should the V  
voltage, due to excessive load current,  
DS  
Y
Logic controlled power supply distribution switch  
exceed the threshold voltage, the output is latched OFF in a  
more gradual fashion (through a 10 mA output current sink)  
after a programmable delay time interval.  
Y
Electronic circuit breaker  
Designed for the automotive application environment the  
b
LM9061 has a wide operating temperature range of 40 C  
up to 26V, and  
§
a
to 125 C, remains operational with V  
§
CC  
can withstand 60V power supply transients. The LM9061 is  
available in an 8-pin small outline package, and an 8-pin  
dual in-line package.  
Typical Application  
Connection Diagrams  
TL/H/12317–3  
Top View  
Order Number LM9061M  
See NS Package Number M08A  
TL/H/12317–1  
TL/H/12317–2  
Top View  
Order Number LM9061N  
See NS Package Number N08E  
C
1995 National Semiconductor Corporation  
TL/H/12317  
RRD-B30M115/Printed in U. S. A.  
1234567...14

中文翻译

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 		5V FIXED POSITIVE LDO REGULATOR, 0.8V DROPOUT, PDSO20, 0.300 INCH, SOP-20
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 		IC VREG 5 V FIXED POSITIVE LDO REGULATOR, 0.8 V DROPOUT, UUC, DIE, Fixed Positive Single O
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