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LM9061M PDF预览

LM9061M

更新时间: 2024-01-17 08:45:02
品牌 Logo 应用领域
美国国家半导体 - NSC 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
20页 319K
描述
IC BUF OR INV BASED MOSFET DRIVER, PDSO8, SOIC-8, MOSFET Driver

LM9061M 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SOIC-8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.17高边驱动器:YES
输入特性:SCHMITT TRIGGER接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:TOTEM-POLE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
电源:7/25 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大压摆率:40 mA最大供电电压:26 V
最小供电电压:7 V标称供电电压:14 V
表面贴装:YES技术:BIMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:10000 µs接通时间:1500 µs
宽度:3.9 mmBase Number Matches:1

LM9061M 数据手册

 浏览型号LM9061M的Datasheet PDF文件第14页浏览型号LM9061M的Datasheet PDF文件第15页浏览型号LM9061M的Datasheet PDF文件第16页浏览型号LM9061M的Datasheet PDF文件第18页浏览型号LM9061M的Datasheet PDF文件第19页浏览型号LM9061M的Datasheet PDF文件第20页 
1231716  
FIGURE 8. Increasing MOSFET Turn On Time  
INCREASING MOSFET TURN ON TIME  
Figure 8 shows a method of increasing the MOSFET Turn On  
time, without affecting the Turn Off time. In this method the  
Gate is charged at an exponential rate set by the added ex-  
ternal Gate resistor and the MOSFET Gate capacitances.  
The ability of the LM9061 to quickly turn on the MOSFET is  
an important factor in the management of the MOSFET power  
dissipation. Caution should be exercised when attempting to  
increase the MOSFET Turn On time by limiting the Gate drive  
current. The MOSFET average dissipation, and the LM9061  
Delay time, must be recalculated with the extended switching  
transition time.  
17  
www.national.com  
 

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