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LM2422TE/NOPB PDF预览

LM2422TE/NOPB

更新时间： 2024-09-20 21:20:51
品牌 Logo 应用领域
德州仪器 - TI 局域网放大器商用集成电路
页数 文件大小 规格书
10页 242K
描述
1 CHANNEL, VIDEO AMPLIFIER, PZFM11, PLASTIC, TO-220, 11 PIN

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LM2422TE/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SFM
包装说明：,针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
其他特性：IT ALSO REQUIRES 7V TO 13V SUPPLY商用集成电路类型：VIDEO AMPLIFIER
JESD-30 代码：R-PZFM-T11JESD-609代码：e3
湿度敏感等级：1信道数量：1
功能数量：3端子数量：11
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大供电电压 (Vsup)：230 V
最小供电电压 (Vsup)：100 V表面贴装：NO
技术：BIPOLAR端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：ZIG-ZAG
处于峰值回流温度下的最长时间：40Base Number Matches：1

LM2422TE/NOPB 数据手册

 浏览型号LM2422TE/NOPB的Datasheet PDF文件第2页浏览型号LM2422TE/NOPB的Datasheet PDF文件第3页浏览型号LM2422TE/NOPB的Datasheet PDF文件第4页浏览型号LM2422TE/NOPB的Datasheet PDF文件第5页浏览型号LM2422TE/NOPB的Datasheet PDF文件第6页浏览型号LM2422TE/NOPB的Datasheet PDF文件第7页 
OBSOLETE  
LM2422  
www.ti.com  
SNOSAL7C –JANUARY 2005–REVISED MAY 2005  
LM2422 220V Monolithic Triple Channel 30 MHz CRT DTV Driver  
Check for Samples: LM2422  
1
FEATURES  
DESCRIPTION  
The LM2422 is a triple channel high voltage CRT  
2
•
•
•
•
30 MHz Bandwidth  
driver circuit designed for use in DTV applications.  
The IC contains three high input impedance, wide  
band amplifiers which directly drive the RGB  
cathodes of a CRT. Each channel has its gain  
internally set to −52 and can drive CRT capacitive  
loads as well as resistive loads present in other  
applications, limited only by the package's power  
dissipation.  
Greater than 130VP-P Output Swing Capability  
0V to 5V Input Voltage Range  
Stable with 0 pF–20 pF Capacitive Loads and  
Inductive Peaking Networks  
•
Convenient TO-220 Staggered Thin Lead  
Package Style  
The IC is packaged in an industry standard 11-lead  
TO-220 molded plastic power package designed  
APPLICATIONS  
•
HDTV Applications Using the 1080i Format as  
well as Other DTV and Standard TV Formats.  
specifically  
to meet  
high voltage spacing  
requirements. See THERMAL CONSIDERATIONS  
section.  
Connection Diagram  
Schematic Diagram  
11  
10  
9
V
BB  
V1  
OUT  
GND  
V2  
8
OUT  
GND  
7
6
V3  
V3  
OUT  
IN  
5
4
NC  
3
V2  
IN  
2
V
CC  
1
V1  
IN  
Figure 1. Top View  
See Package Number NDK0011B  
Figure 2. Simplified Schematic Diagram  
(One Channel)  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2005, Texas Instruments Incorporated  
 
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