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LLE3/D1 PDF预览

LLE3/D1

更新时间: 2024-09-17 14:43:11
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
4页 134K
描述
Zener Diode, 3V V(Z), 6.67%, 0.3W, Silicon, Unidirectional, GLASS, MINIMELF-2

LLE3/D1 技术参数

生命周期:Obsolete零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
Is Samacsys:N其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:3 V
表面贴装:YES技术:ZENER
端子形式:WRAP AROUND端子位置:END
最大电压容差:6.67%工作测试电流:5 mA
Base Number Matches:1

LLE3/D1 数据手册

 浏览型号LLE3/D1的Datasheet PDF文件第2页浏览型号LLE3/D1的Datasheet PDF文件第3页浏览型号LLE3/D1的Datasheet PDF文件第4页 
LL1.5 thru LL5.1  
Voltage Stabilizers  
MiniMELF (SOD-80C)  
Mounting Pad Layout  
Cathode Mark  
0.098(2.50)  
MAX  
0.049(1.25) MIN  
0.063 (1.6)  
0.055 (1.4)  
0.079(2.00) MIN  
0.019 (0.48)  
0.011 (0.28)  
0.142 (3.6)  
0.134 (3.4)  
0.197(5.00)  
REF  
Dimensions in inches and (millimeters)  
Mechanical Data  
Features  
Case: MiniMELF Glass Case (SOD-80C)  
• Silicon Planar Stabilizer Diodes  
Weight: approx. 0.05g  
Cathode band color: Blue  
Packaging codes/options:  
• Monolithic integrated analog circuits in MiniMELF case,  
designed for small power stabilizer and limitation circuits,  
providing low dynamic resistance and high-quality  
stabilization performance as well as low noise. In the  
reverse direction, these devices show the behavior of  
forward-biased silicon diodes.  
D1/10K per 13” reel (8mm tape), 20K/box  
D2/2.5K per 7” reel (8mm tape), 20K/box  
• The end of the device marked with the cathode ring is to  
be connected: LL1.5 and LL2 to the negative pole of the  
supply voltage; LL2.4 thru LL5.1 to the positive pole of  
the supply voltage  
• These diodes are also available in DO-35 case with the  
type designation ZTE1.5 … ZTE 5.1.  
Maximum Ratings (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Operating Current (see Table “Characteristics”)  
Inverse Current  
IF  
Ptot  
TJ  
100  
300(1)  
mA  
W
Power dissipation at Tamb = 25°C  
Junction temperature  
150  
°C  
°C  
Storage temperature range  
TS  
55 to +150  
Electrical and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Forward Voltage at IF = 10mA  
VF  
1.1  
V
Temperature Coefficient of the  
stabilized voltage at IZ = 5mA  
LL1.5, LL2  
LL2.4, LL5.1  
αVZ  
αVZ  
26  
34  
10–4/°C  
10–4/°C  
Thermal resistance junction to ambient air  
RθJA  
0.4(1)  
°C/W  
2/12/01  

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