Datasheet > LL5711

LL5711

更新时间： 2024-09-25 11:33:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		小信号肖特基二极管
页数	文件大小	规格书
2页	48K
描述
SMALL SIGNAL SCHOTTKY DIODES

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中文翻译

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数据手册

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LL5711 数据手册

GALAXY ELECTRICAL

LL5711

VOLTAGE RANGE: 70V

POWER DISSIPATION: 400 mW

SMALL SIGNAL SCHOTTKY DIODES

FEATURES

For general purpose applications

MINI-MELF

Metal silicon schottky barrier device which is protected

by a PN junction guard ring. The low forward voltage

drop and fast switching make it ideal for protection of

MOS devices,steering,biasing and coupling diodes for

fast switching and low logic level applications

Cathode indification

0.4± 0.1

3.4 ^+0.3

MECHANICAL DATA

-0.1

Case:JEDEC MINI-MELF,glass case

Polarity: Color band denotes cathode end

Dimensions in millimeters

Weight: Approx. 0.031 grams

ABSOLUTE RATINGS(LIMITING VALUES)

Symbols

Value

70.0

UNITS

Peak reverse voltage

zmW

V_RRM

P_tot

400¹⁾

2.0

Pow er dissipation (Infinite Heat Sink)

Maximum single cycle surge 10 s square w ave

Junction tenperature

I_FSM

T_J

125

Storage temperature range

c-55 ---+ 150

T_STG

1)Valid provided that leads at a distance of 4mm from case are kept at ambient temperature

ELECTRICAL CHARACTERISTICS

(Ratings at 25 ambient temperature unless otherw ise specified)

Symbols

Typ.

Max.

Min.

70.0

UNITS

Reverse breakdow n voltage

@ I_R=10

V_R

I_R

Leakage current

@ V_R=50V

I_F=1mA

I_F=15mA

Junction capacitance @ V_R=0V,f=1MHz

200.0

0.41

1.0

anA

Forw ard voltage drop

V_F

C_J

t_rr

Reverse recovery time @ I_F=I_R=5mA,recover to 0.1 I_R

Termal resistance junction to ambient air

0.3

R_θ

/mW

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0265030

中文翻译

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