Datasheet > LL4150

LL4150

更新时间： 2024-09-21 05:41:59

品牌	Logo	应用领域
SYNSEMI		二极管开关
页数	文件大小	规格书
2页	27K
描述
HIGH SPEED SWITCHING DIODE

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中文翻译

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数据手册

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LL4150 数据手册

HIGH SPEED SWITCHING DIODE

MiniMELF (SOD-80C)

LL4150

Cathode Mark

FEATURES :

f 0.063 (1.64)

0.055 (1.40)

0.019(0.48)

• High switching speed: max. 4 ns

• Continuous reverse voltage:max. 50 V

• Repetitive peak reverse voltage:max. 75 V

• Repetitive peak forward current: max. 600 mA

• Pb / RoHS Free

0.011(0.28)

0.142(3.6)

0.134(3.4)

Mounting Pad Layout

0.098 (2.50)

Max.

0.049 (1.25)Min.

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80)

Weight: approx. 0.05g

0.079 (2.00)Min.

0.197 (5.00)

REF

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

V_RM

V_R

Value

Unit

Maximum Peak Reverse Voltage

Maximum Reverse Voltage

I_F

Maximum Continuous Current

200

I_F(AV)

I_FSM

P_D

Maximum Average Forward Current

Maximum Surge Forward Current at t < 1s and Tj = 25°C

Maximum Power Dissipation

150

0.5

500

°C/W

°C

I_FRM

Maximum Repetitive Peak Forward Current

600

Thermal Resistance Junction to Ambient Air ⁽¹⁾

R_q

350

T_J

Maximum Junction Temperature

175

T_S

Storage Temperature Range

-65 to + 175

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min.

Typ.

Max.

0.1

Unit

Parameter

Symbol

I_R

V_R= 50 V

Reverse Current

V_R= 50 V , Tj = 150 °C

I_F= 100 mA

100

0.92

1.0

V_F

Forward Voltage

I_F= 200 mA

f = 1MHz ; V_R= 0

I_F= 10 mA to 200 mA

to I_R= 10 mA to 200 mA;

R_L= 100 W ; measured

at I_R= 0.1x I_F

Diode Capacitance

2.5

Reverse Recovery Time

Trr

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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