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LH28F400BGB-L12 PDF预览

LH28F400BGB-L12

更新时间： 2024-11-09 14:52:03
品牌 Logo 应用领域
夏普 - SHARP 内存集成电路
页数 文件大小 规格书
2页 33K
描述
Flash, 256KX16, 150ns, PBGA48, CSP-48

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LH28F400BGB-L12 技术参数

生命周期：Obsolete包装说明：CSP-48
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：N最长访问时间：150 ns
其他特性：IT ALSO OPERATES AT MULTIPLE VOLTAGES & ACCESS TIMEJESD-30 代码：R-PBGA-B48
长度：11 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：16
功能数量：1端子数量：48
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.05 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM类型：NOR TYPE
宽度：8 mmBase Number Matches：1

LH28F400BGB-L12 数据手册

 浏览型号LH28F400BGB-L12的Datasheet PDF文件第2页 
PRODUCT INFORMATION  
Integrated Circuits  
Group  
APPLICATIONS:  
Pager  
Notebook PC  
POS  
®
Set Top Box  
DVD  
LH28F400BG  
4M (256K × 16)  
SmartVoltage  
Flash Memory  
FEATURES  
• SmartVoltage technology  
• Enhanced automated suspend options  
– word write suspend to read  
– block erase suspend to word write  
– block erase suspend to read  
• Low power management  
– deep power-down mode  
– automatic power savings mode  
– Decreases I in static mode  
CC  
• Industry-standard packaging  
– 48-pin TSOP  
– 2.7 V, 3.3 V or 5 V V  
CC  
– 44-pin PSOP  
– 2.7 V, 3.3 V, 5 V or 12 V V  
PP  
• Chip size packaging  
– 48-ball CSP  
• High-performance access time  
– 85 ns (5 V ±025 V), 90 ns (5 V ±0.5 V),  
100 ns (3.3 V ±0.3 V), 120 ns (2.7 V – 3.6 V)  
– 120 ns (5 V ±0.5 V), 130 ns (3.3 V ±0.3 V),  
150 ns (2.7 V – 3.6 V)  
• SRAM-compatible write interface  
™
• ETOX V nonvolatile flash technology  
• Not designed or rated as radiation hardened  
• Operating temperature  
DESCRIPTION  
– Commerical 0°C – +70°C  
SHARP’s LH28F400BG Flash memory with SmartVoltage tech-  
nology is a high-density, low-cost, nonvolatile, read/write storage  
solution for a wide range of applications. LH28F400BG can operate  
at V = 2.7 V and V = 2.7 V. Its low voltage operation capability  
– Industrial -40°C – +85°C  
• Enhanced data protection features  
– Absolute protection with V = GND  
PP  
– Block erase/word write lockout during power transitions  
CC  
PP  
realize battery life and suits for cellular phone application.  
Its boot, parameter and main-blocked architecture, flexible voltage  
and extended cycling provide for highly flexible component suit-  
able for portable terminals and personal computers. Its enhanced  
suspend capabilities provide for an ideal solution for code and data  
storage applications. For secure code storage appli-cations, such  
as networking, where code is either directly executed out of flash  
or downloaded to DRAM, the LH28F400BG offers two levels of  
– Boot blocks protection with WP = V  
IL  
• Optimized array blocking architecture  
– Two 4K-word boot blocks  
– Six 4K-word parameter blocks  
– Seven 32K-word main blocks  
– Top or bottom boot locations  
• Automated word write and block erase  
– Command user interface  
protection: absolute protection with V at GND, selective hardware  
– Status register  
PP  
boot block locking. These alternatives give designers ultimate  
control of their code security needs.  
• Extended cycling capability  
– 100,000 block erase cycles  
The information for this document is from the LH28F400BG-L85/12 Product Preview, Rev. 0.95.  
Copyright ©1998, Sharp Electronics Corp. All rights reserved. All tradenames are the registered property of their respective owners. Specifications are subject to change without notice.  
SMT98015  
12

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