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LH28F400BGHT-L12 PDF预览

LH28F400BGHT-L12

更新时间: 2024-01-05 11:07:33
品牌 Logo 应用领域
夏普 - SHARP ISM频段光电二极管内存集成电路
页数 文件大小 规格书
2页 33K
描述
Flash, 256KX16, 150ns, PDSO48, TSOP-48

LH28F400BGHT-L12 技术参数

生命周期:Obsolete包装说明:TSOP-48
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:150 ns其他特性:IT ALSO OPERATES AT MULTIPLE VOLTAGES & ACCESS TIME
JESD-30 代码:R-PDSO-G48JESD-609代码:e6
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:2.7 V
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
Base Number Matches:1

LH28F400BGHT-L12 数据手册

 浏览型号LH28F400BGHT-L12的Datasheet PDF文件第2页 
PRODUCT INFORMATION  
Integrated Circuits  
Group  
APPLICATIONS:  
Pager  
Notebook PC  
POS  
®
Set Top Box  
DVD  
LH28F400BG  
4M (256K × 16)  
SmartVoltage  
Flash Memory  
FEATURES  
SmartVoltage technology  
Enhanced automated suspend options  
word write suspend to read  
block erase suspend to word write  
block erase suspend to read  
Low power management  
deep power-down mode  
– automatic power savings mode  
Decreases I in static mode  
CC  
• Industry-standard packaging  
48-pin TSOP  
2.7 V, 3.3 V or 5 V V  
CC  
44-pin PSOP  
2.7 V, 3.3 V, 5 V or 12 V V  
PP  
Chip size packaging  
48-ball CSP  
High-performance access time  
85 ns (5 V ±025 V), 90 ns (5 V ±0.5 V),  
100 ns (3.3 V ±0.3 V), 120 ns (2.7 V – 3.6 V)  
120 ns (5 V ±0.5 V), 130 ns (3.3 V ±0.3 V),  
150 ns (2.7 V – 3.6 V)  
SRAM-compatible write interface  
ETOX V nonvolatile flash technology  
Not designed or rated as radiation hardened  
Operating temperature  
DESCRIPTION  
Commerical 0°C – +70°C  
SHARP’s LH28F400BG Flash memory with SmartVoltage tech-  
nology is a high-density, low-cost, nonvolatile, read/write storage  
solution for a wide range of applications. LH28F400BG can operate  
at V = 2.7 V and V = 2.7 V. Its low voltage operation capability  
– Industrial -40°C – +85°C  
Enhanced data protection features  
Absolute protection with V = GND  
PP  
Block erase/word write lockout during power transitions  
CC  
PP  
realize battery life and suits for cellular phone application.  
Its boot, parameter and main-blocked architecture, flexible voltage  
and extended cycling provide for highly flexible component suit-  
able for portable terminals and personal computers. Its enhanced  
suspend capabilities provide for an ideal solution for code and data  
storage applications. For secure code storage appli-cations, such  
as networking, where code is either directly executed out of flash  
or downloaded to DRAM, the LH28F400BG offers two levels of  
Boot blocks protection with WP = V  
IL  
Optimized array blocking architecture  
Two 4K-word boot blocks  
Six 4K-word parameter blocks  
Seven 32K-word main blocks  
Top or bottom boot locations  
Automated word write and block erase  
Command user interface  
protection: absolute protection with V at GND, selective hardware  
Status register  
PP  
boot block locking. These alternatives give designers ultimate  
control of their code security needs.  
Extended cycling capability  
100,000 block erase cycles  
The information for this document is from the LH28F400BG-L85/12 Product Preview, Rev. 0.95.  
Copyright ©1998, Sharp Electronics Corp. All rights reserved. All tradenames are the registered property of their respective owners. Specifications are subject to change without notice.  
SMT98015  

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