Datasheet > L8600

L8600

更新时间： 2024-10-19 21:12:15

品牌	Logo	应用领域
友顺 - UTC		光电二极管
页数	文件大小	规格书
8页	131K
描述
Analog Circuit, PDSO20

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

L8600 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.6	JESD-30 代码：	R-PDSO-G20
端子数量：	20	最高工作温度：	70 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	SSOP	封装等效代码：	SSOP20,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, SHRINK PITCH
电源：	5 V	认证状态：	Not Qualified
子类别：	Other Analog ICs	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	温度等级：	OTHER
端子形式：	GULL WING	端子节距：	0.635 mm
端子位置：	DUAL	Base Number Matches：	1

L8600 数据手册

UTCL8600

LINEAR INTEGRATED CIRCUIT

FET BIAS CONTROLLER

DESCRIPTION

The UTC L8600 is designed to meet the bias requirements

of GaAs and HEMT FETs commonly used in satellite receiver

LNBs, PMR, cellular telephones etc. with a minimum of

external components.

With the addition of two capacitors and resistors the

devices provide drain voltage and current control for a

number of external grounded source FETs, generating the

regulated negative rail required for FET gate biasing whilst

operating from a single supply. This negative bias, at -3 volts,

can also be used to supply other external circuits.

The UTC L8600 contains six bias stages respectively. In

setting drain current the UTC L8600 two resistors splite

control between two and four FETs. This allows the operating

current of input FETs to be adjusted to minimize noise, whilst

the following FET stages can separately be adjusted for

maximum gain. The UTC L8600 gives 2.2 volts drain to be

set for FETs.

SSOP-20(150mil)

FEATURES

* Provides bias for GaAs and HEMT FETs

* Drives up to six FETs

These devices are unconditionally stable over the full

working temperature with the FETs in place, subject to the

inclusion of the recommended gate and drain capacitors.

These ensure RF stability and minimal injected noise.

It is possible to use less than the devices full complement

of FET bias controls, unused drain and gate connections can

be left open circuit without affecting operation of the

remaining bias circuits.

In order to protect the external FETs the circuits have been

designed to ensure that, under any conditions including

power up/down transients, the gate drive from the bias

circuits cannot exceed the range -3.5V to 0.7V.Furthermore if

the negative rail experiences a fault conditions, such as

overload or short circuit, the drain supply to the FETs will shut

down avoiding excessive current flow.

* Dynamic FET protection

* Drain current set by external resistor

* Regulated negative rail generator requires only

2 external capacitors

* Choice in drain voltage

* Wide supply voltage range

APPLICATIONS

* Satellite receiver LNBs

* Private mobile radio(PMR)

* Cellular telephones

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R123-004,A

12 3 4 5 6 7 8

中文翻译

下载PDF

与L8600相关器件

型号	品牌	获取价格	描述	数据表
L8601-01	HAMAMATSU	获取价格	90KV MICROFOCUS X-RAY SOURCE
L8602	UTC	获取价格	LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
L8602G-Q20-4040-R	UTC	获取价格	LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
L8603	UTC	获取价格	6 STAGE FET LNA BIAS CONTROLLER
L8628	HAMAMATSU	获取价格	Transmitter/receiver photo IC for optical link
L8628-01B	HAMAMATSU	获取价格	Logic Output Photo IC, PLASTIC PACKAGE-4
L865/4ADT	KINGBRIGHT	获取价格	LED LIGHT BAR,AMBER,L.E.A. SIP
L865/4EDT	KINGBRIGHT	获取价格	LED LIGHT BAR,AMBER,L.E.A. SIP
L865/4GDT	KINGBRIGHT	获取价格	SINGLE COLOR LED, GREEN, 22 mm
L-865/4GDT	KINGBRIGHT	获取价格	Single Color LED, Green, Diffused, 22mm,

与L8600相关文章

纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

17
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

21
联发科推出全球首款3纳米汽车芯片CT-X1，挑战高通SA8295
2024-10-15

30
国家大基金减持三家半导体企业，市场反应各异
2024-10-15

26

产品中心

服务支持

精选活动

关于我们

帮助中心

L8600

L8600 技术参数

L8600 数据手册

与L8600相关器件

与L8600相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

L8600

L8600 技术参数

L8600 数据手册

与L8600相关器件

与L8600相关文章

您还可以找

您在本页遇到什么问题？