Datasheet > L8711P

L8711P

更新时间： 2024-02-05 09:06:37

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	43K
描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

L8711P 数据手册

polyfet rf devices

L8711P

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

7.0 Watts Single Ended

Package Style S08 P

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

25 C )

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

150

8.0

60 Watts

2.50 C/W

-65 C to 150 C

36 V

20 V

RF CHARACTERISTICS (

7.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 0.40 A, Vds = 7.5 V, F = 500

Gps

Common Source Power Gain

MHz

Idq =

0.40

Drain Efficiency

A, Vds = 7.5 V, F = 500 MHz

Idq = 0.40

A, Vds = 7.5 V, F = 500

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 0.20 mA, Vgs = 0V

Vds =

Bvdss

Idss

2.0

Zero Bias Drain Current

Gate Leakage Current

7.5 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.20 A, Vgs = Vds

1.7

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids = 8.00 A

0.40

13.00

50.0

2.0

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

7.5 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

7.5 Vgs = 0V, F = 1 MHz

40.0

REVISION 12/12/2001

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

下载PDF

与L8711P相关器件

型号	品牌	描述	获取价格	数据表
L8712(FECONLY)	ETC	IC TUBE FOR TO-220 508MM	获取价格
L8721P	POLYFET	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR	获取价格
L87-300	ETC	Logic IC	获取价格
L87-301	ETC	Logic IC	获取价格
L87-302	ETC	Logic IC	获取价格
L87-303	ETC	Logic IC	获取价格