Datasheet > L8721P

L8721P

更新时间： 2024-11-24 22:31:39

品牌	Logo	应用领域
POLYFET		晶体晶体管栅
页数	文件大小	规格书
2页	43K
描述
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

L8721P 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	unknown	风险等级：	5.82
配置：	Single	最大漏极电流 (Abs) (ID)：	8 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	60 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

L8721P 数据手册

polyfet rf devices

L8721P

General Description

Silicon VDMOS and LDMOS

transistors designed specifically

for broadband RF applications.

Suitable for Militry Radios,

SILICON GATE ENHANCEMENT MODE

RF POWER LDMOS TRANSISTOR

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

15.0 Watts Single Ended

Package Style S08 P

"Polyfet" process features

low feedback and output capacitances

HIGH EFFICIENCY, LINEAR

HIGH GAIN, LOW NOISE

resulting in high F transistors with high

input impedance and high efficiency.

25 C )

ABSOLUTE MAXIMUM RATINGS ( T =

Total

Device

Dissipation

Junction to

Case Thermal

Resistance

Maximum

Junction

Temperature

DC Drain

Current

Drain to

Gate

Voltage

Drain to

Source

Voltage

Gate to

Source

Voltage

Storage

Temperature

150

8.0

60 Watts

2.50 C/W

-65 C to 150 C

36 V

20 V

RF CHARACTERISTICS (

15.0 WATTS OUTPUT )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Idq = 0.40 A, Vds = 12.5 V, F = 500

Gps

Common Source Power Gain

MHz

Idq =

0.40

Drain Efficiency

A, Vds = 12.5 V, F = 500 MHz

Idq = 0.40

A, Vds = 12.5 V, F = 500

MHz

VSWR

Load Mismatch Tolerance

20:1

Relative

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

SYMBOL PARAMETER

MIN

TYP

MAX

UNITS

TEST CONDITIONS

Drain Breakdown Voltage

Ids = 0.20 mA, Vgs = 0V

Vds =

Bvdss

Idss

2.0

Zero Bias Drain Current

Gate Leakage Current

12.5 V, Vgs = 0V

Igss

Vgs

Vds = 0V Vgs = 30V

Gate Bias for Drain Current

Ids = 0.20 A, Vgs = Vds

1.7

Forward Transconductance

Saturation Resistance

Mho

Vds = 10V, Vgs = 5V

Rdson

Ohm

Vgs = 20V, Ids = 8.00 A

0.40

13.00

50.0

2.0

Idsat

Ciss

Crss

Coss

Saturation Current

Amp

Vgs = 20V, Vds = 10V

12.5 Vgs = 0V, F = 1 MHz

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Vds =

12.5 Vgs = 0V, F = 1 MHz

40.0

REVISION 12/12/2001

POLYFET RF DEVICES

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

中文翻译

下载PDF

与L8721P相关器件

型号	品牌	获取价格	描述	数据表
L87-300	ETC	获取价格	Logic IC
L87-301	ETC	获取价格	Logic IC
L87-302	ETC	获取价格	Logic IC
L87-303	ETC	获取价格	Logic IC
L87-304	ETC	获取价格	Logic IC
L87-305	ETC	获取价格	Logic IC
L87-306	ETC	获取价格	Logic IC
L87-307	ETC	获取价格	Logic IC
L87-308	ETC	获取价格	Logic IC
L87-309	ETC	获取价格	Logic IC