Datasheet > KXT5551(CXT5551)

KXT5551(CXT5551)

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1000K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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KXT5551(CXT5551) 数据手册

SMD Type

Transistors

NPN Transistors

CXT5551 ^(KXT5551)

Features

1.70 0.1

High current (max. 600mA).

Low voltage (max. 160 V).

● Comlementary to CXT5401

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

180

Unit

VCBO

VCEO

VEBO

160

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

600

500

150

℃

Storage Temperature Range

stg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

180

160

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic=1 mA， I = 0

= 100μA， I = 0

CB= 120 V , I = 0

EB= 5V , I =0

E= 0

CBO

EBO

0.15

0.2

=10 mA, I

=50 mA, I

=10 mA, I

=50 mA, I

B=1mA

B=5mA

B=1mA

B=5mA

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

CE= 5V, I

= 1mA

DC current gain

Noise figure

hFE

= 10mA

= 50mA

300

^CE=5V,Ic=0.2mA,

f=10Hzto15.7KHZ,Rs=10Ω

Collector output capacitance

Transition frequency

^CB= 10V, I

^CE= 10V, I

E=0,f=1MHz

C= 10mA,f=100MHz

100

MHz

■ Marking

Marking

5551

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中文翻译

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