Datasheet > KXU03N25

KXU03N25

更新时间： 2024-11-20 12:04:31

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	263K
描述
VDS (V) = 250V RDS(ON) 2 (VGS = 10V) Drain-Source Voltage VDSS 250 V

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中文翻译

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KXU03N25 数据手册

SMMDD TTyyppee

MOSFET

Product specification

KXU03N25

TO-252

Unit: mm

■ Features

● VDS (V) = 250V

+0.15

+0.1

6.50_-0.15

2.30_-0.1

+0.2

+0.8

5.30_-0.2

0.50_-0.7

● RDS(ON) ≤ 2Ω (VGS = 10V)

0.127

max

+0.1

0.80_-0.1

+0.1

0.60_-0.1

2.3

4.60_-0.15

+0.15

1. Gate

2. Drain

3. Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDSS

VGS

Rating

Unit

250

Gate source voltage

±20

Drain Current — Continuous

Drain Current - Pulsed

Power dissipation

(Note 2)

(Note 1)

- Derate above 25℃

IDM

@ TA = 25℃

0.32

W/℃

℃/W

℃

Thermal resistance, junction - ambient

Operating and storage temperature

RthJA

100

Tj , Tstg

-55 to +150

Note:1.Power rating when mounted on FR-4 glass epoxy printed circuit board using recommended footprint.

2.Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

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sales@twtysemi.com

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4008-318-123

中文翻译

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