Datasheet > KTX101

KTX101

更新时间： 2024-10-02 22:32:03

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
5页	102K
描述
EPITAXIAL PLANAR NPN/PNP TRANSISTOR (GENERAL PURPOSE)

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中文翻译

获取价格

数据手册

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KTX101 数据手册

SEMICONDUCTOR

KTX101E

EPITAXIAL PLANAR NPN/PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

ᴌIncluding two devices in TES6.

(Thin Extreme Super mini type with 6 pin.)

ᴌSimplify circuit design.

DIM MILLIMETERS

1.6+0.05

1.0+0.05

ᴌReduce a quantity of parts and manufacturing process.

1.6+0.05

1.2+0.05

0.50

0.2+0.05

0.5+0.05

0.12+0.05

EQUIVALENT CIRCUIT (TOP VIEW)

MARKING

Type Name

Rank

1. Q EMITTER

2. Q BASE

3. Q COLLECTOR

4. Q EMITTER

5. Q BASE

6. Q COLLECTOR

TES6

Q₁MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

150

Ὠ

I_B

Base Current

Q₂MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-50

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

-5

-150

-30

Ὠ

I_B

Base Current

Q_{1 ,}Q₂MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

P_C*

RATING

200

UNIT

Ὥ

Collector Power Dissipation

Junction Temperature

T_j

150

ᴱ

T_stg

Storage Temperature Range

* Total Raing.

-55ᴕ150

ᴱ

2002. 1. 24

Revision No : 1

1/5

12 3 4 5

中文翻译

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