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KTX215U PDF预览

KTX215U

更新时间: 2024-09-14 17:15:39
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
4页 53K
描述
US6

KTX215U 技术参数

生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:12 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN AND PNP表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):260 MHzBase Number Matches:1

KTX215U 数据手册

 浏览型号KTX215U的Datasheet PDF文件第2页浏览型号KTX215U的Datasheet PDF文件第3页浏览型号KTX215U的Datasheet PDF文件第4页 
KTX215U  
SEMICONDUCTOR  
TECHNICAL DATA  
EPITAXIAL PLANAR PNP/NPN TRANSISTOR  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
FEATURES  
B1  
Including two devices in US6.  
(Ultra Super mini type with 6 leads.)  
With Built-in bias resistors.  
DIM MILLIMETERS  
_
1
2
3
6
5
4
A
A1  
B
2.00+0.20  
_
1.3+0.1  
_
2.1+0.1  
D
_
1.25+0.1  
B1  
C
Simplify circuit design.  
0.65  
0.2+0.10/-0.05  
0-0.1  
Reduce a quantity of parts and manufacturing process.  
D
G
_
0.9+0.1  
H
T
0.15+0.1/-0.05  
T
EQUIVALENT CIRCUIT  
Q
Q
2
G
C
1
OUT  
1. Q (EMITTER)  
1
R1  
Q
2. Q (BASE)  
1
3. Q OUT (COLLECTOR)  
2
2
IN  
B
R1=10K  
R2=10KΩ  
4. Q COMMON (EMITTER)  
2
5. Q IN (BASE)  
2
6. Q (COLLECTOR)  
1
R2  
COMMON  
E
US6  
EQUIVALENT CIRCUIT (TOP VIEW)  
Marking  
6
5
4
6
5
4
Lot No.  
Type Name  
Q1  
BJ  
Q2  
1
2
3
1
2
3
Q1 MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-15  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-12  
V
-6  
V
-500  
-1  
Collector Current  
ICP  
*
* Single pulse Pw=1mS.  
Q2 MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
Output Voltage  
)
SYMBOL  
RATING  
50  
UNIT  
V
VO  
VI  
IO  
Input Voltage  
30, -10  
100  
V
Output Current  
Q1, Q2 MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
PD *  
RATING  
200  
UNIT  
Power Dissipation  
Tj  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
* Total Raing.  
-55 150  
2008. 9. 23  
Revision No : 1  
1/4  

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