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KSR2008 PDF预览

KSR2008

更新时间: 2024-11-07 22:47:27
品牌 Logo 应用领域
三星 - SAMSUNG 晶体开关小信号双极晶体管
页数 文件大小 规格书
2页 67K
描述
PNP (SWITCHING APPLICATION)

KSR2008 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.468
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):56
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

KSR2008 数据手册

 浏览型号KSR2008的Datasheet PDF文件第2页 

KSR2008 替代型号

型号 品牌 替代类型 描述 数据表
RN2009 TOSHIBA

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Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
UN111E PANASONIC

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Silicon PNP epitaxial planer transistor

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